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(Obsolete) Volterra Diode Model: VDIODE1

Symbol

Parameters

Name Description Unit Type Default
ID Diode ID Text VD1
*IS Reverse saturation current Current 1e-11 mA
*RS Series resistance Resistance 0.001 ohm
*N Ideality factor   1
*TT Storage time Time 0 ns
*CJ0 Zero-voltage junction capacitance Capacitance 0 pF
*VJ Built-in voltage Voltage 1 V
*VDD Junction bias voltage Voltage 0 V
*M Grading coefficient   0.5
*FC Depletion capacitance linearization parameter   0.5
*BV Breakdown voltage Voltage 1e+06 V
*IBV (Not implemented) Current 0 mA
*T Temperature Temperature 27 DegC
AFAC Junction area scaling factor   1

* indicates a secondary parameter

Implementation Details

VDIODE1 is a nonlinear incremental model of the Schottky diode. It is equivalent to SDIODE, but is intended primarily for Volterra analysis. The DC junction bias voltage, VDD, is specified by the user, and the program calculates the Taylor series coefficients for both the resistive and capacitive parts of the junction. See the SDIODE element for equations.

Layout

This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.

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