|IS||Reverse saturation current||Current||1e-11 mA|
|RS||Series resistance||Resistance||0.001 ohm|
|TT||Storage time||Time||0 ns|
|CREV||Reverse-voltage capacitance||Capacitance||0 pF|
|BV||Breakdown voltage||Voltage||1e+06 V|
|AFAC||Junction area scaling factor||1|
The diode I/V characteristic is identical to that of other Schottky junctions:
The expression uses a quadratic extrapolation at high current to prevent numerical overflow (see SDIODE). The stored charge is given by
where Tt is the junction charge storage time. Id is scaled in proportion to the area scaling factor, AFAC. This scales the stored charge Qd. Crev is a linear capacitance. It also is scaled in proportion to AFAC.
This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.