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Step-Recovery Diode Model: STEPRD

Symbol

Equivalent Circuit

Parameters

Name Description Unit Type Default
ID Diode ID Text SRD1
IS Reverse saturation current Current 1e-11 mA
RS Series resistance Resistance 0.001 ohm
N Ideality factor   1
TT Storage time Time 0 ns
CREV Reverse-voltage capacitance Capacitance 0 pF
BV Breakdown voltage Voltage 1e+06 V
T Temperature Temperature 27 DegC
AFAC Junction area scaling factor   1

Implementation Details

The diode I/V characteristic is identical to that of other Schottky junctions:

The expression uses a quadratic extrapolation at high current to prevent numerical overflow (see SDIODE). The stored charge is given by

where Tt is the junction charge storage time. Id is scaled in proportion to the area scaling factor, AFAC. This scales the stored charge Qd. Crev is a linear capacitance. It also is scaled in proportion to AFAC.

Layout

This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.

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