 |
| Name | Description | Unit Type | Default |
|---|---|---|---|
| ID | Diode ID | Text | SDG1 |
| *IS | Reverse saturation current | Current | 1e-11 mA |
| *JSW | Periphery reverse saturation current | Current | 0 mA |
| *MULT | Multiplier | 1 | |
| *AFAC | Junction area | 1 | |
| *PJFAC | Junction periphery | 1 | |
| *SCALE | Scale factor | 1 | |
| *SHRINK | Shrink factor | 1 | |
| *L | Diode length | Length | 0 um |
| *W | Diode width | Length | 0 um |
| *XW | Masking or etching correction factor | Length | 0 um |
| *LP | Diode length | Length | 0 um |
| *WP | Diode width | Length | 0 um |
| *XP | Poly masking or etching correction factor | Length | 0 um |
| *LM | Diode length | Length | 0 um |
| *WM | Diode width | Length | 0 um |
| *XM | Metal masking or etching correction factor | Length | 0 um |
| *XOI | Poly to bulk oxide thickness | Length | 10,000um |
| *XOM | Metal to bulk oxide thickness | Length | 10,000um |
| *RS | Series resistance | Resistance | 0.001 ohm |
| *N | Ideality factor | 1 | |
| *TT | Storage time | Time | 0 ns |
| *CJ0 | Zero-voltage bottom junction capacitance | Capacitance | 0 pF |
| *CJP | Zero-voltage periphery junction capacitance | Capacitance | 0 pF |
| *VJ | Bottom built-in voltage | Voltage | 0.8 V |
| *PHP | Periphery built-in voltage | Voltage | 0.8 V |
| *M | Bottom junction grading coefficient | 0.5 | |
| *MJSW | Periphery junction grading coefficient | 0.33 | |
| *FC | Bottom depletion capacitance linearization parameter | 0.5 | |
| *FCS | Periphery depletion capacitance linearization parameter | 0.5 | |
| *BV | Breakdown voltage | Voltage | 1000000 V |
| *IBV | Current at breakdown voltage | Current | 1mA |
| *IKF | Forward knee current | Current | 0 mA |
| *IKR | Reverse knee current | Current | 0 mA |
| *EG | Energy gap @ TNOM; default is Si | 1.16 | |
| *XTI | Temp scaling coefficient; default is Si PN | 3 | |
| *TEXT | Temperature at which diode params were determined | Temperature | 25 DegC |
| *T | Temperature | Temperature | 25 DegC |
| *KF | Flicker noise coefficient | 0 | |
| *AF | Flicker noise exponent | 1 | |
| *FFE | Flicker noise frequency exponent | 1 | |
| *KB | Burst noise coefficient | 0 | |
| *AB | Burst noise exponent | 1 | |
| *FB | Burst noise cutoff frequency | 1 | |
| *NFLAF | Noise model | Noise On | |
| *DCAP | Capacitance model selector | 1 | |
| *TLEV | I/V temperature model | 0 | |
| *TLEVC | Capacitance temperature model | 0 | |
| *CTA | Temperature coefficient for CJ0 | 0 | |
| *CTP | Temperature coefficient for CJP | 0 | |
| *GAP1 | First bandgap correction factor | 0.000702 | |
| *GAP2 | Second bandgap correction factor | 1108 | |
| *TCV | Breakdown voltage temperature coefficient | 0 | |
| *TM1 | First-order temperature coefficient for MJ | 0 | |
| *TM2 | Second-order temperature coefficient for MJ | 0 | |
| *TPB | Temperature coefficient for VJ | 0 | |
| *TPHP | Temperature coefficient for PHP | 0 | |
| *TRS | Resistance temperature coefficient | 0 | |
| *TTT1 | First-order temperature coefficient for TT | 0 | |
| *TTT2 | Second-order temperature coefficient for TT | 0 | |
| *COMPAT | Compatibility selector: HPSICE | AWR | |
| *IMAX | Maximum device current | Current | 1e6 mA |
| *NS | Ideality factor for periphery diode | 1 |
* indicates a secondary parameter
SDIODEG was developed as and extension to SDIODE to support the parameters associated with pn junctions described in terms of their geometry. Accordingly, this model is mapped into HSPICE as a D-device with parameter LEVEL set to 3.
All SDIODE parameters are available in SDIODEG.
This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.