 |
| Name | Description | Unit Type | Default |
|---|---|---|---|
| ID | Diode ID | Text | SD1 |
| *IS | Reverse saturation current | Current | 1e-11 mA |
| *JSW | Periphery reverse saturation current | Current | 0 mA |
| *MULT | Scaling factor | 1 | |
| *AFAC | Junction area | 1 | |
| *PJFAC | Junction periphery | 1 | |
| *RS | Series resistance | Resistance | 0.001 ohm |
| *N | Emission coefficient | 1 | |
| *TT | Storage time | Time | 0 ns |
| *CJ0 | Zero-voltage bottom junction capacitance | Capacitance | 0 pF |
| *CJP | Zero-voltage periphery junction capacitance | Capacitance | 0 pF |
| *VJ | Built-in voltage | Voltage | 0.8 V |
| *PHP | Periphery built-in voltage | Voltage | 0.8 V |
| *M | Grading coefficient | 0.5 | |
| *MJSW | Periphery junction grading coefficient | 0.33 | |
| *FC | Depletion capacitance linearization parameter | 0.5 | |
| *FCS | Periphery depletion capacitance linearization parameter | 0.5 | |
| *BV | Breakdown voltage | Voltage | 1e+06 V |
| *IBV | Current at breakdown voltage | Current | 1 mA |
| *IKF | Forward knee current | Current | 0 mA |
| *IKR | Reverse knee current | Current | 0 mA |
| *EG | Energy gap @ TNOM; default is Si | ||
| *XTI | Temp scaling coefficient; default is Si PN | 3.0 | |
| *TEXT | Temperature at which diode params were determined | Temperature | 25 DegC |
| *T | Temperature | Temperature | 25 DegC |
| *KF | Flicker noise coefficient | 0 | |
| *AF | Flicker noise exponent | 1.0 | |
| *FFE | Flicker noise frequency exponent | 1.0 | |
| *KB | Burst noise coefficient | 0.0 | |
| *AB | Burst noise exponent | 1.0 | |
| *FB | Burst noise cutoff frequency | 1.0 | |
| *NFLAG | Noise model | SPICE model | |
| *DCAP | Capacitance model selector | 1 | |
| *TLEV | I/V temperature model | 0 | |
| *TLEVC | Capacitance temperature model | 0 | |
| *CTA | Temperature coefficient for CJ0 | 0 | |
| *CTP | Temperature coefficient for CJP | 0 | |
| *GAP1 | First bandgap correction factor | 0.000702 | |
| *GAP2 | Second bandgap correction factor | 1108 | |
| *TCV | Breakdown voltage temperature coefficient | 0 | |
| *TM1 | First-order temperature coefficient for M | 0 | |
| *TM2 | Second-order temperature coefficient for M | 0 | |
| *TPB | Temperature coefficient for VJ | 0 | |
| *TPHP | Temperature coefficient for PHP | 0 | |
| *TRS | Resistance temperature coefficient | 0 | |
| *TTT1 | First-order temperature coefficient for TT | 0 | |
| *TTT2 | Second-order temperature coefficient for TT | 0 | |
| *IMAX | Maximum device current | Current | 1e6 mA |
| *COMPAT | Compatibility selector: HPSICE | AWR | |
| *NS | Ideality factor for periphery diode | ||
| *RSW | Sidewall series resistance | Resistance | |
| *GLEAK | Bottom junction leakage conductance | S | |
| *GLEAKSW | Sidewall junction leakage conductance | S | |
| *TGS | Linear temperature coefficient for leakage conductance | 0 | |
| *TGS2 | Quadratic temperature coefficient for leakage conductance | 0 | |
| *CD | Linear capacitance | Capacitance | 0 |
| *ISR | Recombination current | Current | 0 |
| *NR | Recombination current ideality factor | 2 | |
| *JTUN | Tunneling saturation current per area | Current | 0 |
| *NTUN | Reverse tunneling new ideality factor | ||
| *KEG | EG correction factor for tunneling | ||
| *XTITUN | Exponent for the tunneling current temperature | ||
| *EGTUN | Tunneling Energy gap @ TNOM | ||
| *JTUNSW | Sidewall tunneling saturation current per unit junction periphery | Current | 0 |
| *VJMIN | Built-in voltage minimum | Voltage | |
| *TBV2 | BV quadratic temperature coefficient | 0 | |
| *IBVL | Low-level reverse breakdown knee current | Current | 0 |
| *NBVL | Low-level reverse breakdown knee current ideality factor | 1 |
* indicates a secondary parameter
SDIODE started as an implementation of the D-device level 1 of SPICE2. It has progressively been enhanced to include most HSPICE extensions to the original diode model. Accordingly, this model is mapped into HSPICE as a D-device with parameter LEVEL set to 1.
Two parameters, NFLAG and COMPAT, are unique to Cadence® AWR® Microwave Office® software diode implementation. NFLAG's behavior is quite obvious and deserves no further comment. COMPAT, the compatibility selection flag, can take three different values: HSPICE, AWR and SPECTRE. The HSPICE and Spectre values are used to emulate the behavior of the D-device level 1 and diode model in HSPICE and Spectre, respectively. The AWR value supports the Cadence implementation of the pn junction diode with parasitics.
There are five operating regions, as follows:
Region A:
Region B: for
Region C: for
Region D: for
Region E: for
where
The equations are designed so that derivatives of the I/V characteristics are continuous at the boundaries.
The junction capacitance is modeled as in the PNDCAP element. See PNDCAP for the equations.
SDIODE noise comes from four uncorrelated sources: thermal (associated with the series resistance) shot, flicker and burst noise (associated with the junction). The thermal noise is described by a current source in parallel with the series resistance and with spectral density
The shot, flicker and burst noise are described as current sources in parallel with the junction and with spectral densities:
k is Boltzman's constant, T is the temperature, q is the electron charge, IDC is the DC component of junction current, and all spectral densities are expressed in A2/Hz.
NOTE: This model can be used as a Schottky-barrier diode model when TT, the transit time, is set to zero.
This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.