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PSP Model Version 102.1: PSP

Symbol

Summary

PSP implements the entire family of Philips MOS model PSP level 102 devices, i.e., psp1020, psp1021 and psp102e. PSP is based on the Philips SiMKit 2.4.

The PSP model is a new compact MOSFET model, which has been jointly developed by Philips Research and Penn State University. It is a surface-potential based MOS model appropriate to model present-day and upcoming deep-submicron bulk CMOS technologies. It accounts for the following physical effects:

  • mobility reduction

  • velocity saturation

  • DIBL gate current

  • lateral doping gradient effects

  • STI stress

The best reference for the model equations is the Philips website.

Parameters

Name Description Unit Type Default
ID Element ID Text M1
LEVEL Parameters and clipping selector    
*TNOM Parameter extraction temperature DegC 21
*TEMP Device Temperature DegC _TEMP
*NFLAG Noise Flag   Noise On
*MULT Number of devices in parallel   1
TYPE Device type   N
*A1L Length dependence of A1   0
*A1O Geometry independent impact-ionization pre-factor   1
*A1W Width dependence of A1   0
*A2O Impact-ionization exponent at TR (V_)   10
*A3L Length dependence of A3   0
*A3O Geometry independent saturation-voltage dependence of II   0
*A3W Width dependence of A3   0
*A4W Width dependence of A4   0
*ABDRAIN Bottom area of drain junction (m^2)   1e-12
*ABSOURCE Bottom area of source junction (m^2)   1e-12
*AD Bottom area of drain junction (m^2)   1e-12
*AGIDLW Width dependence of GIDL pre-factor (A/V^3)   0
*ALP1L1 Length dependence of CLM enhancement factor above threshold (V)   0
*ALP1L2 Second_order length dependence of ALP1   0
*ALP1LEXP Exponent for length of ALP1   0.5
*ALP1W Width dependence of ALP1   0
*ALP2L1 Length dependence of CLM enhancement factor below threshold (V^-1)   0
*ALP2L2 Second_order length dependence of ALP2   0
*ALP2LEXP Exponent for length dependence of ALP2   0.5
*ALP2W Width dependence of ALP2   0.0005
*ALPL Length dependence of ALP   1
*ALPLEXP Exponent for length dependence of ALP   1
*ALPW Width dependence of ALP   0
*AS Bottom area of source junction (m^2)   1e-12
*AXL Length dependence of AX   0.4
*AXO Geometry independent linear/saturation transition factor   18
*BETW1 First higher-order width scaling coefficient of BETN   0
*BETW2 Second higher-order width scaling coefficient of BETN   0
*BGIDLO GIDL probability factor at TR (V)   41
*CFBO Back-bias dependence of DIBL-parameter (V^-1)   0
*CFL Length dependent of DIBL-parameter (V^-1)   0
*CFLEXP Exponent for length dependence of CF   0
*CFRW Outer fringe capacitance for 1um wide channel (F)   0
*CFW Width dependence of CF   0
*CGBOVL Oxide capacitance for gate-bulk overlap for 1um^2 area (F)   0
*CGIDLO Back-bias dependence of GIDL   0
*CHIBO Tunnelling barrier height (V)   3.1
*CSL Length dependence of CS   0
*CSLEXP Exponent for length dependence of CS   0
*CSLW Area dependence of CS   0
*CSO Geometry independent coulomb scattering parameter at TR   0
*CSW Width dependence of CS   0
*CTL Length dependence of interface states factor   0
*CTLEXP Exponent for length dependence of interface states factor   1
*CTLW Area dependence of interface states factor   0
*CTO Geometry-independent interface states factor   0
*CTW Width dependence of interface states factor   0
*DLQ Effective channel length reduction for CV (m)   0
*DNSUBO Effective doping bias-dependence parameter (V^-1)   0
*DPHIBL Length dependence offset of PHIB (V)   0
*DPHIBLEXP Exponent for length dependence of offset of PHIB   1
*DPHIBLW Area dependence offset of PHIB (V)   0
*DPHIBO Geometry independent coulomb scattering parameter at TR   0
*DPHIBW Width dependence of offset of PHIB   0
*DWQ Effective channel width reduction for CV (m)   0
*FBET1 Relative mobility decrease due to first lateral profile   0
*FBET1W Width dependence of relative mobility decrease due to first la   0
*FBET2 Relative mobility decrease due to second lateral profile   0
*FETAO Effective field parameter   1
*FNTO Thermal noise coefficient   1
*FOL1 First length dependence coefficient for short channel body eff   0
*GC20 Gate current slope factor   0.375
*GC30 Gate current curvature factor   0.063
*GCOO Gate tunneling energy adjustment   0
*IGINVLW Gate channel current pre-factor for 1 um^2 channel area (A)    
*IGOVW Gate overlap current pre-factor for 1 um wide channel (A)   0
*KUO Gate overlap current pre-factor for 1 um wide channel (A)   0
*KVSAT Saturation velocity degradation/enhancement coefficient (m)   0
*KVTHO Threshold shift parameter (Vm)   0
*L Design length (m)   1e-5
*LAP Effective channel length reduction side due to lateral diffision (m)   0
*LGDRAIN Gate-edge length of drain junction (m)   1e-6
*LGSOURCE Gate-edge length of source junction (m)   1e-6
*LKUO Length dependence of KUO (m^LLODKUO)   0
*LKVTHO Length dependence of KVTHO (m^LLODVTH)   0
*LLODKUO Length parameter for UO stress effect   0
*LLODVTH Length parameter for VTH-stress effect   0
*LODETAO eta0 shift modification factor for stress effect   1
*LOV Overlap length for gate/drain and gate/source overlap capacitance (m)   0
*LP1 Mobility-related characteristic length of first lateral profile (m)   1e-8
*LP1W Width dependence of mobility-related characteristic length   0
*LP2 Mobility-related characteristic length of second lateral profile (m)   1e-8
*LPCK Char. length of lateral doping profile (m)   1e-8
*LPCKW Width dependence of char. length of lateral doping profile   0
*LSDRAIN STI-edge length of drain junction (m)   1e-6
*LSSOURCE STI-edge length of source junction (m)   1e-6
*LVARL Length dependence of difference between actual and program   0
*LVARO Geometry independent difference between actual programmed gate (m)   0
*LVARW Width dependence of LVAR   0
*MUEO Geometry independent mobility reduction coefficient at TR (m/V)   0.5
*MUEW Width dependence of mobility reduction coefficient at TR   0
*MUNQSO Relative mobility for NQS modelling   1
*NFALW First coefficient of flicker noise for 1 um^2 channel area (V^-1/m^4)   8e22
*NFBLW Second coefficient of flicker noise for 1 um^2 channel area (V^-1/m^2)   30000000
*NFCLW Third coefficient of flicker noise for 1um^2 channel area (V^-1)   0
*NOVO Effective doping of overlap region (m^-3)   5e25
*NPCK Pocket doping level (m^-3)   1e24
*NPCKW Width dependence of pocket doping NPCK due to segregation   0
*NPL Length dependence of gate poly-silicon doping   0
*NPO Geometry-independent gate poly silicon doping (m^-3)   1e26
*NSLPO Effective doping bias-dependence parameter (V)   0.05
*NSUBO Geometry independent substrate doping (m^-3)   3e23
*NSUBW Width dependence of background doping NSUBO due to segregation   0
*PD Perimeter of drain junction (m)   1e-6
*PKUO Cross-term dependence of KUO (m^(LLODKUO+WLODKUO))   0
*PKVTHO Cross-term dependence of KVTHO (m^(LLODVTH+WLODVTH))   0
*PS Perimeter of source junction (m)   1e-6
*QMC Quantum-mechanical correction factor   1
*RBULKO Bulk resistance between node BP and BI (ohm)   0.001
*RGO Gate resistance   0.001
*RJUNDO Drain-size bulk resistance between node BI and BD (ohm)   0.001
*RJUNSO Source-side bulk resistance between node BI and BS (ohm)   0.001
*RSBO Back-bias dependence of series resistance (V^-1)   0
*RSGO Gate-bias dependence of series resistance (V^-1)   0
*RSW1 Source/drain series resistance for 1 um wide channel at TR (ohm)   2500
*RSW2 Higher-Order width scaling of RS   0
*RWELLO Well resistance between node BI and B (ohm)   0.001
*SA Distance between OD-edge to poly from one side (m)   0
*SAREF Reference distance between OD-edge to poly from one side (m)   1e-6
*SB Distance between OD-edge to poly from other side   0
*SBREF Reference distance between OD-edge to poly from other side (m)   1e-6
*STA20 Temperature dependence of A2 (V)   0
*STBETL Length dependence of temperature dependence of BETN   0
*STBETLW Area dependence of temperature dependence of BETN   0
*STBETO Geometry independent temperature dependence of BETN   1
*STBETW Width dependence of temperature dependence of BETN   0
*STBGIDLO Temperature dependence of BGIDL (V/K)   0
*STCSO Temperature dependence of CS   0
*STEATAO eta0 shift factor related to VTHO change (m)   0
*STIGO Temperature dependence of IGINV AND IGOV   2
*STMEUO Temperature dependence of MUE   0
*STRSO Temperature dependence of RS   1
*STTHEMUO Temperature dependence of THEMU   1.5
*STTHESATLW Area dependence of temperature dependence of THESAT   0
*STTHESATO Geometry independent temperature dependence of THESAT   1
*STTHESATW Width dependence of temperature dependence of THESAT   0
*STVFBL Length dependence of temperature dependence of VFB   0
*STVFBLW Area dependence of temperature dependence of VFB   0
*STVFBO Geometry-independent temperature dependence of VFB (V/K)   0.0005
*STVFBW Width dependence of temperature dependence of VFB   0
*STXCORO Temperature dependence of XCOR   0
*SWGIDL Flag for GIDL current   0
*SWIGATE Flag for gate current   0
*SWIMPACT Flag for impact ionization current   0
*SWJUNCAP Flag for juncap   0
*SWNQS Flag for NQS (number of collocation points)   0
*THEMUO Mobility reduction exponent at TR   1.5
*THESATBO Back-bias dependence of velocity saturation (V^-1)   0
*THESATGO Gate-bias dependence of velocity saturation (V^-1)   0
*THESATL Length dependence of THESAT(V^-1)   0.05
*THESATLEXP Exponent for length dependence of THESAT   1
*THESATLW Area dependence of velocity saturation parameter   0
*THESATO Geometry independent velocity saturation parameter at TR   0
*THESATW Width dependence of velocity saturation parameter   0
*TKUO Temperature dependence of KUO   0
*TOXO Gate oxide thickness (m)   2e-9
*TOXOVO Overlap oxide thickness (m)   2e-9
*TRJ reference temperature (C)   21
*UO Zero-field mobility at TR (m^2/V/s)   0.05
*VFBL Length dependence of flat-band voltage   0
*VFBLW Area dependence of flat-band voltage   0
*VFBO Geometry-independent flat0band voltage at TR (V)   -1
*VFBW Width dependence of flat-band voltage   0
*VNSUBO Effective doping bias-dependence parameter (V)   0
*VPO CLM logarithmic dependence parameter (V)   0.05
*W Design width (m)   1e-5
*WBET Characteristic width for width scaling of BETN (m)   1e-9
*WKUO Width dependence of KUO (m^WLODKUO)   0
*WKVTHO Width dependence of KVTHO (m^WLODVTH)   0
*WLOD Width parameter (m)   0
*WLODKUO Width parameter for UO stress effect   0
*WLODVTH Width parameter for VTH-stress effect   0
*WOT Effective reduction of channel width per side due to later (m)   0
*WSEG Char. length of segregation of background doping NSUBO (m)   1e-8
*WSEGP Char. length of segregation of pocket doping NPCK (m)   1e-8
*WVARL Length dependence of WVAR   0
*WVARO Geom. independent difference between actual and programmed field oxide opening (m)   0
*WVARW Width dependence of difference between actual and programmed field oxide opening (m)   0
*XCOR Non-universality factor (V^-1)   0
*XCORL Length dependence of non-universality parameter   0
*XCORLW Area dependence of non-universality parameter   0
*XCORO Geometry independent non-universality parameter (V^-1)   0
*XCORW Width dependence of non-universality parameter   0

* indicates a secondary parameter

Implementation Details

The TYPE parameter controls whether the device is N or P channel. You can select the desired model level using the LEVEL parameter, which allows selecting between physical geometrical scaling rules (1020), binning geometrical scaling rules (1021), and the electrical model (102e). Unlike the comprehensive parameter list above, only those parameters corresponding to a given level are displayed with the element. The extraction and simulation temperatures correspond to the TNOM and TEMP parameters, respectively; instead of the TR and DTA parameters. Parameter default and truncation values are identical to those employed by Philips. Operating point information also follows Philip's prescription closely.

Layout

This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.

References

[1] http://www.nxp.com/acrobat_download/other/philipsmodels/nl_tn2006_00546.pdf

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