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Diode, Noisy Resistive Junction, No Parasitics: PNIV_N

Symbol

Parameters

Name Description Unit Type Default
ID Device ID Text PN1
*IS Reverse saturation current Current 1e-11 mA
*N Ideality factor   1
*BV Breakdown voltage (positive) Voltage 1e+06 V
*IKF Forward knee current Current 0 mA
*IKR Reverse knee current Current 0 mA
*IBV Current at breakdown voltage Current 0 mA
*T Temperature Temperature 27 DegC
AFAC Junction area scaling factor   1
*KF Flicker noise coefficient   0
*AF Flicker noise exponent   1
*FFE Flicker noise frequency exponent   1
*KB Burst noise coefficient   0
*AB Burst noise exponent   1
*FB Burst noise cutoff frequency   1
*NFLAG Noise model   Noise On

* indicates a secondary parameter

Implementation Details

This model is identical to PNIV, except that it includes SPICE noise sources. The noise model is identical to that of SDIODE.

Layout

This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.

References

[1] P. Antognetti and G. Massobrio, Semiconductor Device Modeling with SPICE, New York: McGraw-Hill, 1988.

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