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Diode Resistive Junction No Parasitics: PNIV

Symbol

Parameters

Name Description Unit Type Default
ID Device ID Text PN1
*IS Reverse saturation current Current 1e-11 mA
*N Ideality factor   1
*BV Breakdown voltage (positive) Voltage 1e+06 V
*IKF Forward knee current Current 0 mA
*IKR Reverse knee current Current 0 mA
*IBV Current at breakdown voltage Current 0 mA
*T Device temperature Temperature 27 DegC
AFAC Junction area scaling factor   1

* indicates a secondary parameter

Implementation Details

The I/V characteristic is identical to that of the SDIODE element. This element does not include junction capacitance or series resistance. As a result, a smaller set of parameters controls the behavior of this device. Like SDIODE, this device is mapped to HSPICE as a D-device with parameter LEVEL set to 1.

Layout

This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.

Reference

[1] P. Antognetti and G. Massobrio, Semiconductor Device Modeling with SPICE, New York: McGraw-Hill, 1988.

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