|Er1||First (top) layer relative dielectric constant||Er|
|Er2||Second layer relative dielectric constant||Er|
|Er3||Third layer relative dielectric constant||Er|
|Er4||Fourth layer relative dielectric constant||Er|
|Tand1||Loss tangent of the first (top) layer||0|
|Tand2||Loss tangent of the second layer||0|
|Tand3||Loss tangent of the third layer||0|
|Tand4||Loss tangent of fourth (bottom) layer||0|
|H1||First (top) layer thickness||Length||H|
|H2||Second layer thickness||Length||H|
|H3||Third layer thickness||Length||H|
|H4||Fourth (bottom) layer thickness||Length||H|
|Rho||Metal bulk resistivity relative to gold||Rho|
 User-modifiable default. Modify by editing under $DEFAULT_VALUES in the
Er1, Er2, Er3, Er4 are the permittivities of the substrate materials relative to free space ε0 = 8.85 x 10-12 F/M. Tand1, Tand2, Tand3, Tand4 are the dielectric loss tangent of the substrate material: Tand = εr″/εr′ where εr = εr′ -jεr″
Rho is the bulk resistivity of conductor metal normalized to gold (to 2.44 x 10 -8 Ω*m)
Actual metal bulk resistivity = Rho * 2.44 x 10 -8 Ω*m.
H1, H2, H3, H4, and T are the cross-sectional dimensional variables entered in default length units.
In a schematic that contains microstrip elements, at least one instance of this element must exist. The Name parameter provides a unique identifier for each instance of MSUB4. The microstrip elements have an MSUB4 parameter that indicates which MSUB4 element to use.
This substrate is used in MEMLIN (Embedded Microstrip Line) and MEM2LIN (2 Embedded Coupled Microstrip Lines) models.
Note that you can also add this substrate to the Global Definitions window and then reference the material from any schematic.
This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.