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(Obsolete) SPICE Level 2 P MOSFET Model: MOSP2

Symbol

Summary

There is no replacement for this OBSOLETE element.

Parameters

Name Description Unit Type Default
ID Device ID Text M2P3
L Gate length um 100
W Gate width um 100
AS Source diffusion bottom area m^2   0
AD Drain diffusion bottom area, m^2   0
PS Source diffusion perimeter um 0
PD Drain diffusion perimeter um 0
NRD Number of squares in drain area (for RD)   0
NRS Number of squares in source are (for RS)   0
Delta Narrow width factor to adjust threshold   0
VMAX Maximum carrier drift velocity   0
NEFF Total channel charge coefficient   1
XJ Metallurgical junction depth   1e-6
UCRIT Critical electric field for mobility   1000
UTRA Transverse field coefficient   0
UEXP Exponential coefficient for mobility   0
NFLAG Noise Model   Spice Model
*VTO Threshold voltage at zero bias V -0.13388
*KP Transconductance parameter   2e-5
*GAMMA Bulk-effect parameter   0.5273
*PHI Surface potential V 0.57984
*LAMBDA Channel-length modulation parameter   0
*RD Drain resistance ohm 0.001
*RS Source resistance ohm 0.001
*CBD Bulk-drain capacitance at zero bias pF 0
*CBS Bulk-source capacitance at zero bias pF 0
*PB Bulk junction built-in voltage V 0.8
*IS Bulk junction current parameter mA 1e-11
*CGSO Gate-source overlap capacitance per meter of gate width pF 0
*CGDO Gate-drain overlap capacitance per meter of gate width pF 0
*CGBO Gate-bulk overlap capacitance per meter of gate width pF 0
*RSH Drain&Source diffusion sheet resistance ohm 0.001
*CJ Bulk bottom capacitance per square meter at zero bias pF 0
*MJ Bulk junction grading parameter   0.5
*CJSW Bulk junction periphery capacitance per meter at zero bias pF 0
*MJSW Bulk junction periphery capacitance grading parameter   0.33
*JS Bulk junction saturation current per square meter mA 0
*TOX Oxide thickness um 0.1
*NSUB Bulk doping density (cm^-3)   1e15
*NSS Surface state density (cm^-2)   0
*TPG Gate material flag; metal=0, same=-1, diff-+1   1
*LD Lateral diffusion length um 0
*WD Lateral diffusion length along width um 0
*UO Mobility (cm^2/v*s); must not be zero if TOX=0   250
*FC Depletion capacitance linearization parameter   0.5
*TYPE (Not implemented)   PMOS
*RG Gate resistance ohm 0.001
*RDS Drain-source resistance ohm 100000000
*N Bulk PN ideality factor   1
*TT Bulk PN storage time ns 0
*TNOM Parameter extraction temperature Degc 26.85
*TEMP Device temperature DegC 26.85
*ER Substrate dielectric constant   11.7
*EQX Oxide dielectric constant   3.9
*NI Substrate intrinsic carrier concentration (cm^-3)   14500000000
*KF Drain flicker (1/f) noise coefficient   0
*AF Drain flicker (1/f) noise exponential term   1
*FFE Drain flicker (1/f) noise frequency exponent   1

* indicates a secondary parameter

Layout

This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.

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