MOS9 is an implementation of the Philips MOS model 9 level 903 device. The model is intended for the simulation of circuit behavior with emphasis on analogue applications. It provides an excellent description of the electrical characteristics in all relevant regions of transistor operation. The underlying model is based on the gradual-channel approximation with a number of first order corrections for small size effects, which allows to describe transistor behavior over a wide range of channel lengths and widths using just one parameter set. The consistency is maintained by using the same carrier-density and electrical-field expression in the calculation of all model quantities.

Name | Description | Unit Type | Default |
---|---|---|---|

ID | Element ID | Text | M1 |

*TNOM | Parameter extraction temperature | DegC | 21 |

*TEMP | Device temperature | DegC | 21 |

*NFLAG | Noise flag | Noise On | |

*LER | Effective channel length of reference transistor | um | 1.1 |

*WER | Effective channel width of reference transistor | um | 20 |

*LVAR | Difference between actual and programmed poly-silicon gate lengths | um | -0.22 |

*LAP | Effective channel length reduction per side | um | 0.1 |

*WVAR | Difference between actual and programmed filed-oxide opening | um | -0.025 |

*WOT | Effective channel width reduction per side | um | 0 |

*VTOR | Threshold at zero back-bias of reference transistor | V | .73 |

*STVTO | Threshold voltage temperature of coefficient (VK^-1) | -0.0012 | |

*SLVTO | Threshold voltage length dependence first coefficient (Vm) | -1.35e-7 | |

*SL2VTO | Threshold voltage length dependence second coefficient (Vm^2) | 0 | |

*SL3VTO | Threshold voltage length dependence third coefficient | V | |

*SWVTO | Threshold voltage width dependence coefficient (Vm) | 1.3e-7 | |

*KOR | Low back-bias body factor (V^0.5) | 0.65 | |

*SLKO | Low back-bias body factor length dependence first coefficient (V^0.5m) | -1.3e-7 | |

*SL2KO | Low back-bias body factor length dependence second coefficient (V^0.5m^2) | ||

*SWKO | Low back-bias body factor width dependence coefficient (V^0.5m) | 2e-9 | |

*KR | High back-bias body factor (V^0.5) | 0.11 | |

*SLK | High back-bias body factor length dependence first coefficient (V^0.5m) | -2.8e-7 | |

*SLK2 | High back-bias body factor length dependence second coefficient (V^0.5m^2) | ||

*SWK | High back-bias body factor width dependence coefficient (V^0.5m) | 2.75e-7 | |

*PHIBR | Strong inversion surface potential | V | 0.65 |

*VSBXR | Transition voltage for the dual-k factor model | V | 0.66 |

*SLVSBX | VSBXR length dependence coefficient (Vm) | 0 | |

*SWVSBX | VSBXR width dependence coefficient (Vm) | -6.75e-7 | |

*BETSQ | Gain factor for the infinite square transistor (AV^.2) | 8.3e-5 | |

*ETABET | Gain factor temperature dependence exponent | 1.6 | |

*LP1 | Characteristic length of first profile | um | |

*FBET1 | Relative mobility decrease due to first profile | ||

*LP2 | Characteristic length of second profile | um | |

*FBET2 | Relative mobility decrease due to second profile | ||

*THE1R | Gate induced field mobility reduction coefficient (V^-1) | 0.19 | |

*STTHE1R | THE1R temperature dependence coefficient (V^-1K^-1) | 0 | |

*SLTHE1R | THE1R length dependence coefficient (V^-1m) | 1.4e-7 | |

*STLTHE1 | THE1R length dependence temperature coefficient (V^-1mK^-1) | 0 | |

*GTHE1 | THE1R scaling rule selector 0:old, 1:new | ||

*SWTHE1 | THE1R width dependence coefficient (V^-1m) | -5.8e-8 | |

*WDOG | Characteristic drawn gate width, below which dogboning appears | um | 0 |

*FTHE1 | THE1R geometry dependence coefficient | ||

*THE2R | Back-bias mobility reduction coefficient (V^-.5) | 0.012 | |

*STTHE2R | THE2R temperature dependence coefficient (V^-.5K^-1) | 0 | |

*SLTHE2R | THE2R length dependence coefficient (V^-0.5m) | -3.3e-8 | |

*STLTHE2 | THE2R length dependence temperature coefficient (V^-0.5mK^-0.5) | 0 | |

*SWTHE2 | THE2R width dependence coefficient (V^-0.5m) | 3e-8 | |

*THE3R | Lateral field mobility reduction coefficient (V^-1) | 0.145 | |

*STTHE3R | THE3R temperature dependence coefficient (V^-1k^-1) | -0.00066 | |

*SLTHE3R | THE3R length dependence coefficient (V^-1m) | 1.85e-7 | |

*STLTHE3 | THE3R length dependence temperature coefficient (V^-1mK^-1) | -6.2e-10 | |

*SWTHE3 | THE3R width dependency coefficient (V^-1m) | 2e-8 | |

*GAM1R | Drain induced threshold shift for large gate drive coefficient (V^(1-nDS)) | 0.145 | |

*SLGAM1 | GAM1R length dependence coefficient (V^(1-nDS)m) | 1.6e-7 | |

*SWGAM1 | GAM1R width dependence coefficient (V^(1-nDS)m) | -1e-8 | |

*ETADSR | GAM1R Vds dependence exponent | 0.6 | |

*ALPR | Channel length modulation factor | 0.003 | |

*ETAALP | ALPR length dependence exponent | 0.15 | |

*SLALP | ALPR length dependence coefficient (m^nALPHA) | -0.00565 | |

*SWALP | ALPR width dependence coefficient | 0.00167 | |

*VPR | Channel length modulation characteristic voltage | V | 0.34 |

*GAMOOR | Zero gate drive drain induced threshold shift coefficient | 0.018 | |

*SLGAMOO | GAMOOR first length dependence coefficient (m^2) | 2e-14 | |

*SL2GAMOO | GAMOOR second length dependence coefficient | ||

*ETAGAMR | GAMOOR back-bias dependence exponent | 2 | |

*MOR | Subthreshold slope factor | 0.5 | |

*STMO | MOR temperature dependence coefficient (K^1) | 0 | |

*SLMO | MOR length dependence coefficient (M^0.5) | 0.00028 | |

*ETAMR | MOR back-bias dependence exponent | 2 | |

*ZET1R | ZET1R length dependence exponent | 0.42 | |

*ETAZET | ZET1R length dependence exponent | 0.5 | |

*SLZET1 | ZET1R length dependence coefficient (m^nGAMMA) | -0.39 | |

*VSBTR | MOR and GAMOOR Vsb dependence limiting voltage | V | 2.1 |

*SLVSBT | VSVTR length dependence coefficient (Vm) | -4.4e-6 | |

*A1R | Weak-avalanche current factor | 6 | |

*STA1 | A1R temperature dependence coefficient (K^-1) | 0 | |

*SLA1 | A1R length dependence coefficient | um | 1.3 |

*SWA1 | A1R width dependence coefficient | um | 3 |

*A2R | Weak-avalanche current exponent | V | 38 |

*SLA2 | A2R length dependence coefficient (Vm) | 1e-6 | |

*SWA2 | A2R width dependence coefficient (Vm) | 2e-6 | |

*A3R | Weak-avalanche drain-source voltage factor | 0.65 | |

*SLA3 | A3R length dependence coefficient | um | -0.55 |

*SWA3 | A1R width dependence coefficient | um | 0 |

*TOX | Gate-oxide layer thickness | um | 0.025 |

*COL | Gate overlap capacitance per unit channel width (Fm^-1) | 3.2e-10 | |

*NTR | Thermal noise coefficient (J) | 2.44e-20 | |

*NFMOD | Flicker noise model selector. 0:old, 1:new | 0 | |

*NFR | Flicker noise coefficient (V^2) | 7e-11 | |

*NFAR | First flicker noise coefficient (V^-1m^-4) | ||

*NFBR | Second Flicker noise coefficient (V^-1m^-2) | ||

*NFCR | Third Flicker noise coefficient (V^-1) | ||

*L | Lay-out drawn channel length | um | 1.5 |

*W | Lay-out drawn channel width | um | 20 |

*MULT | Number of devices in parallel | 1 | |

*THE3MOD | Flag for THE3R clipping |

`* indicates a secondary parameter`

The default and restrictions on the range of parameter values is in full compliance with the model definition.

The following letter pairs have been used to identify the NL branches: ds, bs, bd, gs and gd

Parameter | Description |
---|---|

pwr (W) | Power. |

gm (S) | Transconductance . |

gmb (S) | Bulk transconductance . |

gds (S) | Output conductance . |

vgt1 (V) | Threshold voltage including backbias effects. |

vgt2 (V) | Effective gate drive including backbias and drain effects. |

vds1 (V) | Saturation limit. |

vdss1 (V) | Saturation voltage at actual bias. |

cgg (F) | |

cgb (F) | |

cgd (F) | |

cgs (F) | |

cbg (F) | |

cbb (F) | |

cbd (F) | |

cbs (F) | |

cdg (F) | |

cdb (F) | |

cdd (F) | |

cds (F) | |

csg (F) | |

csb (F) | |

csd (F) | |

css (F) |

. Here g,d,s abd b correspond to the gate, drain, source and substrate terminals, respectively. These are used to identify branch related operating point information, i.e., branch voltages, currents, etc.

This model is mapped into HSPICE as a NMOS M-device with parameters LEVEL set to 50, which corresponds to the Philips MOS model 9 level 902 device, whose parameter set is a subset of the one of the level 903 device. Changing any of the parameters not supported by HSPICE into something different than its default value will result in a warning being issued by the simulator. For the complete set of equations see Ref. [1]

This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.