HICUM_L2A was conceived as a replacement for models HICUM_L2, HICUM_L2_P, HICUM_L2_SH, and HICUM_L2_SH_P. HICUM_L2A is based on the Verilog-A description of the HICUM Level 2 Version 2.22 model, which is available on the web. The HICUM Level 2 model is a semi-physical compact bipolar transistor model. HICUM is based on an extended and generalized Integral Charge Control Relation (ICCR). However, in contrast to the original Gummel-Poon model and its variants, in HICUM the ICCR concept is applied consistently without simplifications or additional fitting parameters. Quantities like depletion capacitances, transit times and associated charges, which determine the dynamic transistor behavior, are considered as basic quantities of the model.

The important physical and electrical effects taken into account by HICUM_L2A include: high current effects, emitter current crowding, 2- and 3-dimensional collector current spreading, temperature dependence and self-heating (SELFT on), weak avalanche breakdown, tunneling in the base-emitter junction, bandgap differences, substrate transistor, etc. Compared to the SPICE Gummel-Poon model, the equivalent circuit of HICUM contains two additional circuit nodes. Furthermore, the transfer current is not an explicit function of branch voltages and its computation relies on an internal Newton solver. Due to this additional complexity, simulations using the HICUM_L2A model are generally slower than those employing the GBJT model. As a result, you should use HICUM_L2A only where the need for accuracy justifies its complexity, and where parameter libraries are available.

Name | Description | Unit Type | Default |
---|---|---|---|

ID | Device ID | HCM L0 1 | |

*TNOM | Temperature at which params were extracted | DegC | 27 |

TEMP | Ambient temperature | DegC | _TEMP |

MULT | Number of devices in parallel | 1 | |

*C10 | GICCR constant | 2e-30 | |

*QP0 | Zero-bias hole change | 2e-14 | |

*ICH | High-current correction for 2D and 3D effects | 0 | |

*HFE | Emitter minority charge weighting factor in HBTs | 1 | |

*HFC | Collector minority charge weighting factor in HBTs | 1 | |

*HJEI | B-E depletion charge weighting factor in HBTs | 1 | |

*HJCI | B-C depletion charge weighting factor in HBTs | 1 | |

*IBEIS | Internal B-E saturation current | mA | 1e-15 |

*MBEI | Internal B-E current ideality factor | 1 | |

*IREIS | Internal B-E recombination saturation current | mA | 0 |

*MREI | Internal B-E recombination current ideality factor | 2 | |

*IBEPS | Peripheral B-E saturation current | mA | 0 |

*MBEP | Peripheral B-E current ideality factor | 1 | |

*IREPS | Peripheral B-E recombination saturation current | mA | 0 |

*MREP | Peripheral B-E recombination current ideality factor | 2 | |

*MCF | Non-ideality factor for III-V HBTs | 1 | |

*TBHREC | Base-current recombination time constant at B-C barrier for high forward injection | 0 | |

*IBCIS | Internal B-C saturation current | mA | 1e-13 |

*MBCI | Internal B-C current ideality factor | ||

*IBCXS | External B-C saturation current | mA | 0 |

*MBCX | External B-C current ideality factor | 1 | |

*IBETS | B-E tunneling saturation current | mA | 0 |

*ABET | Exponent factor for tunneling current | 40 | |

*TUNODE | Specifies the base node connection for the tunneling current | 1 | |

*FAVL | Avalanche current factor | 0 | |

*QAVL | Exponent factor for avalanche current | 0 | |

*ALFAV | Relative TC for FAVL | 0 | |

*ALQAV | Relative TC for QAVL | 0 | |

*RBI0 | Zero bias internal base resistance | ohm | 0 |

*RBX | External base series resistance | ohm | 0 |

*FGEO | Factor for geometry dependence of emitter current crowding | 0.6557 | |

*FDQR0 | Correction factor for modulation by B-E and B-C space charge layer | 0 | |

*FCRBI | Ratio of HF shunt to total internal capacitance (lateral NQS effect) | 0 | |

*FQI | Ratio of internal to total minority charge | 1 | |

*RE | Emitter series resistance | ohm | 0 |

*RCX | External collector series resistance | ohm | 0 |

*ITSS | Substrate transistor transfer saturation current | mA | 0 |

*MSF | Forward ideality factor of substrate transfer current | 1 | |

*ISCS | C-S diode saturation current | mA | 0 |

*MSC | Ideality factor of C-S diode current | 1 | |

*TSF | Transit time for forward operation of substrate transistor | ns | 0 |

*RSU | Substrate series resistance | ohm | 0 |

*CSU | Substrate shunt capacitance | pF | 0 |

*CJEI0 | Internal B-E zero-bias depletion capacitance | pF | 1e-8 |

*VDEI | Internal B-E built-in potential | V | 0.9 |

*ZEI | Internal B-E grading coefficient | 0.5 | |

*AJEI | Ratio of maximum to zero-bias value of internal B-E capacitance | 2.5 | |

*CJEP0 | Peripheral B-E zero-bias depletion capacitance | pF | 1e-8 |

*VDEP | Peripheral B-E built-in potential | V | 0.9 |

*ZEP | Peripheral B-E grading coefficient | 0.5 | |

*AJEP | Ratio of maximum to zero-bias value of peripheral B-E capacitance | 2.5 | |

*CJCI0 | Internal B-C zero-bias depletion capacitance | pF | 1e-8 |

*VDCI | Internal B-C built-in potential | V | 0.7 |

*ZCI | Internal B-C grading coefficient | 0.4 | |

*VPTCI | Internal B-C punch-through voltage | V | 100 |

*CJCX0 | External B-C zero-bias depletion capacitance | pF | 1e-8 |

*VDCX | External B-C built-in potential | V | 0.7 |

*ZCX | External B-C grading coefficient | 0.4 | |

*VPTCX | External B-C punch-through voltage | V | 100 |

*FBCPAR | Partitioning factor of parasitic B-C cap | 0 | |

*FBEPAR | Partitioning factor of parasitic B-E cap | 1 | |

*CJS0 | C-S zero-bias depletion capacitance | pF | 0 |

*VDS | C-S built-in potential | V | 0.6 |

*ZS | C-S grading coefficient | 0.5 | |

*VPTS | C-S punch-through voltage | V | 100 |

*T0 | Low current forward transit time in VBC=0V | ns | 0 |

*DTOH | Time constant for base and B-C space charge layer width modulation | ns | 0 |

*TBVL | Time constant for modelling carrier jam at low VCE | ns | 0 |

*TEF0 | Neutral emitter storage time | ns | 0 |

*GTFE | Exponent factor for current dependence of neutral emitter storage time | 1 | |

*THCS | Saturation time constant at high current densities | ns | 0 |

*AHC | Smoothing factor for current dependence of base and collector transit time | 0.1 | |

*FTHC | Partitioning factor for base and collector portion | 0 | |

*RCI0 | Internal collector resistance at low electric field | ohm | 150 |

*VLIM | Voltage separating ohmic and saturation velocity regime | V | 0.5 |

*VCES | Internal C-E saturation voltage | V | 0.1 |

*VPT | Collector punch-through voltage | V | 0 |

*TR | Storage time for inverse operation | ns | 0 |

*CBEPAR | Total parasitic B-E capacitance | pF | 0 |

*CBCPAR | Total parasitic B-C capacitance | pF | 0 |

*ALQF | Factor for additional delay time of minority charge | 0 | |

*ALIT | Factor for additional delay time of transfer current | 0 | |

*FLNQS | Flag for turning on and off of vertical NQS effect | 0 | |

*KF | Flicker noise coefficient | 0 | |

*AF | Flicker noise exponent factor | 2 | |

*CFBE | Flag for determining where to tag the flicker noise source | (-1) | |

*LATB | Scaling factor for collector minority charge in direction of emitter width | 0 | |

*LATL | Scaling factor for collector minority charge in direction of emitter length | 0 | |

*VGB | Bandgap voltage extrapolated to 0 K | V | 1.17 |

*ALT0 | First order relative TC of parameter T0 | 0 | |

*KT0 | Second order relative to TC of parameter T0 | 0 | |

*ZETACI | Temperature exponent for RCI0 | 0 | |

*ALVS | Relative TC of saturation drift velocity | 0 | |

*ALCES | Relative TC of VCES | 0 | |

*ZETARBI | Temperature exponent for internal base resistance | 0 | |

*ZETARBX | Temperature exponent of external base resistance | 0 | |

*ZETARCX | Temperature exponent for external collector resistance | 0 | |

*ZETARE | Temperature exponent of emitter resistance | 0 | |

*ZETACX | Temperature exponent of mobility in substrate transistor transit time | 0 | |

*VGE | Effective emitter bandgap voltage | V | 1.17 |

*VGC | Effective collector bandgap voltage | V | 1.17 |

*VGS | Effective substrate bandgap voltage | V | 1.17 |

*F1VG | Coefficient K1 in T-dependent band-gap equation | (-1.023770E-004) | |

*F2VG | Coefficient K2 in T-dependent band-gap equation | 0.00043215 | |

*ZETACT | Exponent coefficient in transfer current temperature dependence | 3 | |

*ZETABET | Exponent coefficient in B-E junction current temperature dependence | 3.5 | |

*ALB | Relative TC of forward current gain for V2.1 model | 0 | |

SELFT | Self-heating support | off | |

*RTH | Thermal resistance | ohm | 0 |

*CTH | Thermal capacitance | pF | 0 |

FLSH | Flag for self-heating calculation | COMPLETE | |

TYPE | Device type | NPN | |

*FLCOMP | Flag for compatibility with v2.1 model (0=v2.1) | 0 |

`* indicates a secondary parameter`

The TYPE parameter controls whether the device is NPN or PNP. The SELFT parameter is used to enable/disable the Self-Heating modeling capabilities. The current setting of either parameter is immediately reflected by the device symbol. The FLSH, CTH and RTH parameters are only visible when Self-Heating is enabled. The FLSH parameter determines how the dissipated power calculation is performed.

This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.