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(Obsolete) Rectangular Spiral RFIC Microstrip Inductor (FEM Quasi-Static): FMRIND

Symbol

Summary

This element is OBSOLETE and is replaced by the Rectangular Spiral RFIC Inductor (FEM Quasi-Static) (FMRIND2) element. This circuit component models an RFIC microstrip rectangular inductor with a strip underpass. The inductor is located atop the insulating dielectric and covered with a passivation layer. This model is based on an evaluation of self and mutual inductances, capacitances, admittances, and resistances between all segments. Calculation of these circuit parameters is based on an accurate 2D FEM quasi-static model of coupled microstrip lines arranged on/into the dielectric (silicon oxide) layer above the conducting substrate. This model accounts for the passivation layer, optional ground straps surrounding the inductor, and for the presence of a conducting (high-doped) layer between insulated layers and the substrate.

Topology

Cross-sectional View

Parameters

Name Description Unit Type Default
ID Element ID Text MI1
NS Number of linear segments (>=4)   15
L1 Length of first segment Length 80 um
L2 Length of second segment Length 155 um
L3 Length of third segment Length 165 um
LN Length of last segment Length 35 um
AB Angle of underpass departure   0 deg
W Conductor width Length 10 um
S Conductor spacing Length 5 um
WB Width of underpass conductor Length 10 um
HB Height of underpass conductor above substrate Length 2 um
LB Length of underpass conductor extension beyond inductor Length 0 um
TB Thickness of underpass conductor Length 1 um
RhoB Underpass metal bulk resistivity normalized to gold   1
MRFSUB Substrate definition Text MRFSUB1[1]
*IsGndStrap Ground straps presence (Switch No/Yes)   No
*GndGap Distance between ground strap and inductance edge Length 10
*GndWid Width of ground strap Length 10
*GndLevel Height of ground strap above substrate Length 10
*IsHDLl High-doped layer presence atop of substrate (Switch No/Yes)   No
*H_HDL Bulk conductance of high-doped layer Siemens/m 700
*Cond_HDL Height of high-doped layer Length 2 um
*PassWrap Flat/Conforming passivation (Switch Flat passivation/Conforming passivation)   Flat passivation
*HP Thickness of conforming passivation layer between turns Length 2 um

[1] Modify only if schematic contains multiple substrates. See the “Using Elements With Model Blocks” for details.

* indicates a secondary parameter

Parameter Details

NS. The number of linear conductor segments forming an inductor. NS should be greater than 4 and less than NSMAX. The value of NSMAX can be evaluated from the condition LNMAX >0, where

LNMAX = L2-(NS-2)(W+S)/2 for even NS

LNMAX = L3-(NS-3)(W+S)/2 for odd NS

The layout feasibility check is run before performing calculations.

LN. The length of the last segment LN should not exceed LNMAX (see above). If the LN value is too large the model automatically sets LN to LNMAX and issues a warning. LN also should not be less than (W+WB)/2. If the LN value is too small the model automatically sets LN to (W+WB)/2 and issues a warning.

AB. The angle AB (degrees) defines the direction of underpass departure from the end of the last segment. Only 0, 90, 180 and 270 are allowed for AB. The Zero angle has an underpass that is parallel to L1 and goes to the opposite direction. The angle is measured counterclockwise. Any intermediate value of AB is set to the closest acceptable value.

The underpass is not allowed to overlap the last segment. If this happens, the model changes AB so that the underpass departs in the opposite direction.

Important: The layout cell overrides the setting for AB and sets the underpass exit to the opposite direction if overlapping occurs.

HB. The height of the underpass is the distance between the upper substrate boundary (the top of the high-doped layer if present) and the bottom of the underpass conductor.

LB. This is the length of the part of underpass conductor that sticks out from the external edge of conducting turns.

MRFSUB. See the MRFSUB documentation. Note that notations H1, H2, H3, Er1, Er2, Er3, Tand1, Tand2, Tand3, Sig3 on the cross-sectional view above are MRFSUB respective parameters.

Out90deg (Layout cell parameter only): Note that the layout cell of this model has an Out90deg parameter (to edit values of this parameter select the corresponding layout cell, right-click on it and choose Shape Properties >Parameters). Setting this parameter to a nonzero value means that the orientation of a face at port 2 provides connection to an external circuit via a right (90deg) bend. Correspondingly, setting this parameter to zero means that the orientation of a face at port 2 provides an"in line" (no bend) connection to an external circuit. The default value is zero. Setting it to a nonzero value (for example, to 1) doesn't affect the electrical properties of the model; no bend component is added automatically. You can attach any bend model to port 2 if needed.

HP. This parameter is ignored if PassWrap="Flat passivation", else HP provides thickness of passivation layer that covers the gap between turns. Model implies that passivation layer has the same thickens at sides and bottom of the gap (Cross-sectional View).

Parameter Restrictions and Recommendations

  1. NS should be greater than 4 and less than NSMAX. The value of NSMAX can be evaluated from condition LNMAX >0 (see "Parameter Details").

  2. There are no limits on T except possible aggravations due to an overly thin T (see "Implementation Details"). Note that the conductor must stay within the passivation layer so the conductor thickness T must be less than 0.95*H1.

  3. Selection PassWrap=Yes makes the passivation layer skirt the conductor contour. Note that when PassWrap=Yes the passivation thickness varies: on the conductor top it equals H1-T; at the valley between conductors (both sides and bottom) passivation thickness is 1/3*(H1-T).

  4. To exclude passivation, set MRFSUB parameters Er1=1 and Tand1=0. Set H1 large enough (H1>>T) to avoid an overly thin air layer between the top of the conductor and the top of the mock "passivation" layer (see "Implementation Details").

  5. To model a suspended MEMS (micro-electromechanical systems) inductor, set Er2=1.

Implementation Details

2D Finite Element Method (FEM) in conjunction with quasi-static problem formulation provides a very stable solution for RFICs most common dimensions and frequency range. The FEM engine is partially based on the FEMM solver ([1]); it comprises a mesher ([2]) and two independent solvers: an electrical solver and a magnetic solver. The mesher generates a mesh that covers the entire cross-section including the cross-section of conductors. Usually, this method consumes a reasonable amount of computing resources; however, in certain situations memory consumption and run time may escalate because some specified dimensions force the mesher to generate overly dense mesh. Commonly, this happens due to an error in parameter specifications that results in creation of extremely narrow layers.

The following figure demonstrates the typical distribution of current across conductors cross-section (conforming passivation). Note that the model provides mesh fine enough (and large enough) to reveal small details of skin effect and current crowding.

Layout

This element uses line types to determine its layout. By default, the layout uses the first line type defined in your Layout Process File (LPF). You can change the element to use any of the line types configured in your process:

  1. Select the item in the layout.

  2. Right-click and choose Shape Properties to display the Cell Options dialog box.

  3. Click the Layout tab and select a Line Type.

  4. Click OK to use the new line type in the layout.

See “Cell Options Dialog Box: Layout Tab ” for Cell Options dialog box Layout tab details.

See “The Layout Process File (LPF)” for more information on editing Layout Process Files (LPFs) and to learn about adding or editing line types.

Recommendations for Use

Computation time substantially grows with mesh size. Mesh inside conductors may heavily contribute into total mesh size because size of a mesh cell inside conductor is governed by value of skin depth at the highest simulation frequency. Mesh does not vary with frequency so the same fine mesh works at lower frequencies. Frequency-independent mesh results in improved stability and consistency but with some sacrifice in solution time.

NOTE: The implementation of FEM Quasi-Static models relies on temporary intermediate text files. This model creates these files temporarily in the project directory and subsequently deletes them. There may be several dozen files and they may use up to 100 MB of disk space, so ensure that your hard drive has sufficient free space.

References

[1] FEMM (by David Meeker) home page: https://www.femm.info/wiki/HomePage

[2] Jonathan Richard Shewchuk. Triangle. A Two-Dimensional Quality Mesh Generator and Delaunay Triangulator. Follow this link for information and download: http://cs.cmu.edu/~quake/triangle.html

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