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Field Effect Transistor Noise Model (Pospieszalski’s): FETN

Symbol

Equivalent Circuit

Parameters

Name Description Unit Type Default
ID Element ID Text FN1
TA Ambient temperature of the chip Temperature 24 DegC
TG1 Constant temperature of RGS Temperature -98 DegC
TG2 Frequency-dependent temperature of RGS Temperature 1727 DegC
FN Frequency-dependent multiplier Frequency 1e-09 GHz
TD Temperature of RDS Temperature 1727 DegC
*GM FET transconductance Conductance 0.1 S
*CGS Gate to source capacitance Capacitance 0.25 pF
*RGS Gate to source resistance Resistance 4 ohm
*RDS Drain to source resistance Resistance 300 ohm
*TAU FET transit time Time 0 ns
*CDS Drain to source capacitance Capacitance 0.05 pF
*CDG Drain to gate capacitance Capacitance 0.05 pF
*RS Source resistance Resistance 2 ohm
*RD Drain resistance Resistance 1 ohm
*RG Gate resistance Resistance 1 ohm
*LS Source inductance Inductance 0.01 nH
*LD Drain inductance Inductance 0.1 nH
*LG Gate inductance Inductance 0.2 nH
*CPG Gate pad capacitance Capacitance 0.01 pF
*CPD Drain pad capacitance Capacitance 0.01 pF

* indicates a secondary parameter

Layout

This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.

References

[1] Marian W. Pospieszalski, "Modeling of Noise Parameters of MESFET's and MODFET's and Their Frequency and Temperature Dependence", IEEE Transactions on Microwave Theory and Techniques, Vol. 37, No. 9, pp. 1340 - 1350, September 1989.

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