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Field Effect Transistor Noise Model (Pospieszalski’s): FETN


Equivalent Circuit


Name Description Unit Type Default
ID Element ID Text FN1
TA Ambient temperature of the chip Temperature 24 DegC
TG1 Constant temperature of RGS Temperature -98 DegC
TG2 Frequency-dependent temperature of RGS Temperature 1727 DegC
FN Frequency-dependent multiplier Frequency 1e-09 GHz
TD Temperature of RDS Temperature 1727 DegC
*GM FET transconductance Conductance 0.1 S
*CGS Gate to source capacitance Capacitance 0.25 pF
*RGS Gate to source resistance Resistance 4 ohm
*RDS Drain to source resistance Resistance 300 ohm
*TAU FET transit time Time 0 ns
*CDS Drain to source capacitance Capacitance 0.05 pF
*CDG Drain to gate capacitance Capacitance 0.05 pF
*RS Source resistance Resistance 2 ohm
*RD Drain resistance Resistance 1 ohm
*RG Gate resistance Resistance 1 ohm
*LS Source inductance Inductance 0.01 nH
*LD Drain inductance Inductance 0.1 nH
*LG Gate inductance Inductance 0.2 nH
*CPG Gate pad capacitance Capacitance 0.01 pF
*CPD Drain pad capacitance Capacitance 0.01 pF

* indicates a secondary parameter


This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.


[1] Marian W. Pospieszalski, "Modeling of Noise Parameters of MESFET's and MODFET's and Their Frequency and Temperature Dependence", IEEE Transactions on Microwave Theory and Techniques, Vol. 37, No. 9, pp. 1340 - 1350, September 1989.

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