Go to www.awrcorp.com
Back to search page Click to download printable version of this guide.

Field Effect Transistor (Closed Form): FET


Equivalent Circuit


Name Description Unit Type Default
ID Element ID Text F1
G Magnitude of transconductance at DC (beta) Conductance 0.1 S
T Time delay of the transconductance Time 0 ns
F Roll off frequency of the transconductance Frequency 0 GHz
CGS Gate to source capacitance Capacitance 0 pF
GGS Gate to source conductance Conductance 1 S
RI Channel resistance Resistance 1 ohm
CDG Drain to gate capacitance Capacitance 0 pF
CDC Dipole layer capacitance Capacitance 0 pF
CDS Drain to source capacitance Capacitance 0 pF
RDS Drain to source resistance Resistance 100 ohm
RS Source resistance Resistance 0 ohm

Implementation Details

Implements a FET transistor with DC transconductance specified by G.

The frequency-dependent transconductance G(f) is given by


This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.


  1. Assumed to be noiseless.

Legal and Trademark Notice