Name | Description | Unit Type | Default |
---|---|---|---|

ID | Device ID | EB1 | |

*ISF | Saturation current | mA | 9.53e-12 |

*ISR | Saturation current | mA | 1.01e-11 |

*NF | Fwd ideality factor | 1 | |

*VAF | Fwd Early voltage | V | 1000000000 |

*IKF | Fwd current knee | mA | 1e15 |

*ISE | BC leakage current param | mA | 0 |

*NE | BE leakage ideality factor | 1.5 | |

*NR | Rev ideality factor | 1 | |

*VAR | Rev Early voltage | V | 1000000000 |

*IKR | Rev current knee | mA | 1e15 |

*ISC | BC leakage current param | mA | 0 |

*NC | BC leakage ideality factor | 2 | |

*IBIF | BE base current param | mA | 1.48e-13 |

*NBF | BE base current ideality factor | 1.06 | |

*IBIR | BC base current param | mA | 6.71e-13 |

*NBR | BC base current ideality factor | 1.04 | |

*RB | Base resistance | ohm | 0.01 |

*RE | Emitter resistance | ohm | 0.01 |

*RC | Collector resistance | ohm | 0.01 |

*CJE | CJ0 for BE junction | pF | 0 |

*VJE | BE built-in potential | V | 0.75 |

*MJE | BE grading coefficient | 0.33 | |

*TF | Fwd transit time | ns | 0 |

*XTF | Coefficient for bias dependence of TF | 0 | |

*VTF | Voltage for VBC dependence of TF | V | 1000000000 |

*ITF | High-current parameter for TF | mA | 0 |

*PTF | Excess phase param; must be degrees | 0 | |

*CJC | CJ0 for BC junction | pF | 0 |

*VJC | BC built-in potential | V | 0.75 |

*MJC | BC grade coefficient | 0.33 | |

*XCJC | Fraction of CBC to internal node | 1 | |

*TR | Rev transit time | ns | 0 |

*CJS | CJ0 for substrate capacitance | pF | 0 |

*VJS | Built-in potential for substrate cap | V | 0.75 |

*MJS | Substrate cap grading coefficient | 0.33 | |

*XTB | Thermal scaling parameter | 0 | |

*EG | Thermal scaling parameter | 1.11 | |

*XTI | Thermal scaling parameter | 3 | |

*KF | Flicker noise coefficient | 0 | |

*AF | Flicker noise exponent | 1 | |

*FFE | Flicker noise frequency exponent | 1 | |

*FC | Coefficient for forward-bias depletion | 0.5 | |

*TYPE | (Not implemented) | 0 | |

*NK | (Not implemented) | 0 | |

*TEXT | Temperature at which params were extracted | DegC | 25 |

*TNOM | Temperature | DegC | 25 |

*KB | Burst noise coefficient | 0 | |

*AB | Burst noise exponent | 1 | |

*FB | Burst noise cutoff frequency | 1 | |

*ISS | Collector-substrate current param | mA | 0 |

*NS | Collector-substrate ideality factor | 1 | |

*TS | Collector-substrate diode storage time | ns | 0 |

*LB | Base inductance | nH | 1e-6 |

*LE | Emitter inductance | nH | 0 |

*LC | Collector inductance | nH | 0 |

*AFAC | Area scale factor | 1 | |

*NFLAG | 1=noise is on; 0=noise is turned off | 0 |

`* indicates a secondary parameter`

The EEBJT2 model evolved from the Gummel-Poon and other earlier models. As a result EEBJT2 still maintains lots of similarities with its predecessors and can be conveniently described by simply stating its differences respect to element GBJT. With the exception of the equations listed below elements EEBJT2 and GBJT are identical. As the these equations show, EEBJT2 has completely dropped the basic assumption that the non-leakage base-emitter current can be related to the collector-emitter current by a simple constant. Also, the base resistance is now linear and there is no splitting of the base-collector junction capacitance. These two facts translate in a simpler model with generally better convergence properties than SGPM.

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(2) |

(3) |

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This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.