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(Obsolete) EEBJT2 Bipolar Junction Transistor Model : EEBJT2



Name Description Unit Type Default
ID Device ID   EB1
*ISF Saturation current mA 9.53e-12
*ISR Saturation current mA 1.01e-11
*NF Fwd ideality factor   1
*VAF Fwd Early voltage V 1000000000
*IKF Fwd current knee mA 1e15
*ISE BC leakage current param mA 0
*NE BE leakage ideality factor   1.5
*NR Rev ideality factor   1
*VAR Rev Early voltage V 1000000000
*IKR Rev current knee mA 1e15
*ISC BC leakage current param mA 0
*NC BC leakage ideality factor   2
*IBIF BE base current param mA 1.48e-13
*NBF BE base current ideality factor   1.06
*IBIR BC base current param mA 6.71e-13
*NBR BC base current ideality factor   1.04
*RB Base resistance ohm 0.01
*RE Emitter resistance ohm 0.01
*RC Collector resistance ohm 0.01
*CJE CJ0 for BE junction pF 0
*VJE BE built-in potential V 0.75
*MJE BE grading coefficient   0.33
*TF Fwd transit time ns 0
*XTF Coefficient for bias dependence of TF   0
*VTF Voltage for VBC dependence of TF V 1000000000
*ITF High-current parameter for TF mA 0
*PTF Excess phase param; must be degrees   0
*CJC CJ0 for BC junction pF 0
*VJC BC built-in potential V 0.75
*MJC BC grade coefficient   0.33
*XCJC Fraction of CBC to internal node   1
*TR Rev transit time ns 0
*CJS CJ0 for substrate capacitance pF 0
*VJS Built-in potential for substrate cap V 0.75
*MJS Substrate cap grading coefficient   0.33
*XTB Thermal scaling parameter   0
*EG Thermal scaling parameter   1.11
*XTI Thermal scaling parameter   3
*KF Flicker noise coefficient   0
*AF Flicker noise exponent   1
*FFE Flicker noise frequency exponent   1
*FC Coefficient for forward-bias depletion   0.5
*TYPE (Not implemented)   0
*NK (Not implemented)   0
*TEXT Temperature at which params were extracted DegC 25
*TNOM Temperature DegC 25
*KB Burst noise coefficient   0
*AB Burst noise exponent   1
*FB Burst noise cutoff frequency   1
*ISS Collector-substrate current param mA 0
*NS Collector-substrate ideality factor   1
*TS Collector-substrate diode storage time ns 0
*LB Base inductance nH 1e-6
*LE Emitter inductance nH 0
*LC Collector inductance nH 0
*AFAC Area scale factor   1
*NFLAG 1=noise is on; 0=noise is turned off   0

* indicates a secondary parameter

Implementation Details

The EEBJT2 model evolved from the Gummel-Poon and other earlier models. As a result EEBJT2 still maintains lots of similarities with its predecessors and can be conveniently described by simply stating its differences respect to element GBJT. With the exception of the equations listed below elements EEBJT2 and GBJT are identical. As the these equations show, EEBJT2 has completely dropped the basic assumption that the non-leakage base-emitter current can be related to the collector-emitter current by a simple constant. Also, the base resistance is now linear and there is no splitting of the base-collector junction capacitance. These two facts translate in a simpler model with generally better convergence properties than SGPM.



This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.


This model was developed under research performed at Cadence Design Systems, Inc. The full set of details of the implementation are considered proprietary in nature.

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