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BSIM4 MOSFET Model: BSIM4

Symbol

Summary

The Cadence® BSIM4 element is based on the UC Berkeley BSIM4 model. Versions 4.4 and 4.5 are supported. The BSIM4 model explicitly addresses many issues in modeling sub-0.13 micron technology and RF high-speed circuit simulation. The BSIM4 model has major improvements and additions over BSIM3v3 such as:

  • Accurate new model of the intrinsic input resistance for both RF, high-frequency analog, and high-speed digital applications

  • Flexible substrate resistance network for RF modeling

  • New accurate models for channel thermal noise and noise partitioning for the induced gate noise

  • Non-Quasi-Static (NQS) model that is consistent with the Rg-based RF model

  • Accurate gate direct tunneling model

  • Comprehensive and versatile geometry-dependent parasitics model for various source/drain connections and multi-finger devices

  • Asymmetrical and bias-dependent source/drain resistance, either internal or external to the intrinsic MOSFET at user discretion

  • Quantum mechanical charge-layer-thickness model for both IV and CV

  • More accurate mobility model for predictive modeling

  • Gate-induced drain leakage (GIDL) current model

  • Improved unified flicker (1/f) noise model, which is smooth over all bias regions and considers the bulk charge effect

  • Different diode IV and CV characteristics for source and drain junctions

Parameters

Name Description Binning Unit Type Default
ID Element ID   Text M1
TYPE Device type     1
*TNOM Parameter extraction temperature   Temperature 294.15DegK
*TEMP Device temperature   Temperature 294.15DegK
*NFLAG Noise flag     1
*MULT Number of devices in parallel     1
*W Channel width (m)     5e-6
*L Channel length (m)     5e-6
*NF Number of device fingers     1
*MIN Minimum number of device fingers     0
*AS Area of source diffusion (m^2)      
*AD Area of drain diffusion (m^2)      
*PS Perimeter of source diffusion (m)      
*PD Perimeter of drain diffusion (m)      
*NRS Number of squares of source diffusion     1
*NRD Number of squares of drain diffusion     1
*SA Distance between OD edge to poly of one side     0
*SB Distance between OD edge to poly of the other side     0
*SD Distance between neighbor fingers     0
*RGEOMOD Diffusion resistance and contact model flag     0
*MOBMOD Mobility model selector     0
*BINUNIT Units of size parameters in binning approach     1
*PARAMCHK Parameter value check flag     1
*CAPMOD Intrinsic charge model     2
*DIOMOD Diode model selector     1
*RDSMOD Bias-dependent D/S model selector     0
*TRNQSMOD Transient NQS flag     0
*ACNQSMOD AC NQS flag     0
*RBODYMOD Rbody flag     0
*RGATEMOD Rgate flag     0
*PERMOD Perimeter model selector     1
*GEOMOD geometry flag     0
*FNOIMOD Flicker noise model selector     1
*TNOIMOD Thermal noise model selector     0
*IGCMOD Gate-to-channel tunneling model selector     0
*IGBMOD Gate-to-substrate tunneling model selector     0
*TEMPMOD Temperature mode selector     0
*TOXREF Nominal get oxide thickness for gate dielectric tunneling current model only     30e-10
*TOXE Electrical gate oxide thickness (m)     30e-10
*TOXP Electrical gate oxide thickness (m)      
*TOXM TOXE at which parameters were extracted (m)      
*DTOX Difference between electrical and physical gate oxide thickness (m)     0
*EPSROX Gate dielectric constant     3.9
*CDSC Source/drain and channel coupling capacitance (F/m^2)     2.4e-4
*CDSCB Body-bias dependence of cdsc (F/m^2*v)     0
*CDSCD Drain-bias dependence of cdsc (F/m^2*v)     0
*CIT Interface trap parameter for subthreshold swing (F/m^2)     0
*NFACTOR Subthreshold swing coefficient     1
*XJ Source/drain junction depth (m)     0.15e-6
*VSAT Carrier saturation velocity at tnom (m/s)     8.0e4
*A0 Nonuniform depletion width effect coefficient     1
*AGS Gate-bias dependence of Abulk (F/m^2*V)     0
*A1 No-saturation coefficient     0
*A2 No-saturation coefficient     1
*AT Temperature coefficient for vsat (m/s)     3.3e4
*KETA Body-bias coefficient for non-uniform depletion width effect (1/V)     -0.047
*NSUB Substrate doping concentration (cm^-3)     6e16
*NDEP Channel doping concentration (cm^-3)     1.7e17
*NSD Source-drain dropping concentration (cm^-3)     1e20
*NGATE Poly-gate doping concentration (cm^-3)     0
*GAMMA1 Body-effect coefficient near the surface      
*GAMMA2 Body-effect coefficient in the bulk      
*VBX Threshold voltage transition body voltage      
*VBM Maximum applied body voltage     -3
*XT Doping depth (m)     1.55e-7
*K1 Body-effect coefficient      
*KT1 Temperature coefficient for threshold voltage (V)     -0.11
*KT1L Temperature coefficient for threshold voltage (v*m)     0
*KT2 Temperature coefficient for threshold voltage     0.022
*K2 Charge-sharing parameter      
*K3 Narrow width coefficient     80
*K3B Narrow width coefficient     0
*LPE0 Lateral non-uniform doping at Vbs=0     1.74e-7
*LPEB Lateral non-uniform doping effect on K1     0
*DVTP0 First coefficient of drain-induced Vth shift for long-channel pocket devices (m)     0
*DVTP1 Second coefficient of drain-induced Vth shift for long-channel pocket devices (1/V)     0
*W0 Narrow width coefficient     2.5e-6
*DVT0 First coefficient of short-channel effects     2.2
*DVT1 Second coefficient of short-channel effects     0.53
*DVT2 Body-bias coefficient of short-channel effects (1/V)     -0.032
*DVT0W First coefficient of narrow-width effects     0
*DVT1W Second coefficient of narrow-width effects (1/m)     5.3e6
*DVT2W Body-bias coefficient of narrow-width effects     -0.032
*DROUT DIBL effect on output resistance coefficient     0.56
*DSUB DIBL effect in subthreshold region      
*VTH0 Threshold voltage at zero body bias for long-channel devices      
*EU Exponent for mobility degradation of mobmod=2      
*UA First-order mobility reduction coefficient (m/v)      
*UA1 Temperature coefficient for ua (m/v)     1e-9
*UB Second-order mobility reduction coefficient (m^2/v^2)     1e-19
*UB1 Temperature coefficient for ub (m^2/v^2)     -1e-18
*UC Body-bias dependence of mobility (m/v^2)      
*UC1 Temperature coefficient for uc (m/v^2)      
*U0 Low-field surface mobility at tnom (cm^2/V*S)      
*UTE Mobility temperature exponent     -1.5
*VOFF Threshold voltage offset (V)     -0.08
*VOFFL Channel-length dependence of Voff (V)     0
*MINV Vgsteff fitting parameter for moderate inversion condition     0
*FPROUT Effect of pocket implant on Rout degradation (V/m^0.5)     0
*PDITS Effect of pocket implant on Rout degradation (1/V)     0
*PDITSD Channel-length of drain-induced Vth shift on Rout (1/V)     0
*PDITSL Channel-length of drain-induced Vth shift on Rout (1/m)     0
*DELTA Effective drain voltage smoothing parameter (v)     0.01
*RDSW Zero bias LDD resistance per unit width for RDSMOD=0     200
*RDSWMIN LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=0     0
*RDWMIN LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=1     0
*RSWMIN LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=1     0
*RDW Zero bias LDD resistance per unit width for RDSMOD=1     100
*RSW Zero bias LDD resistance per unit width for RDSMOD=1     100
*PRWG Gate-effect coefficient for Rds (1/V)     1
*PRWB Body-effect coefficient for Rds (v^-0.5)     0
*PRT Temperature coefficient for Rds (ohm*m)     0
*ETA0 DIBL coefficient subthreshold region     0.08
*ETAB Body-bias dependence of et0 (1/V)     -0.07
*PCLM Channel length modulation coefficient     1.3
*PDIBL1 First coefficient of drain-induced barrier lowering     0.39
*PDIBL2 Second coefficient of drain-induced barrier lowering     0.0086
*PDIBLB Body-effect coefficient for DIBL (1/V)     0
*PSCBE1 First coefficient of substrate current body effect (v/m)     4.24e8
*PSCBE2 Second coefficient of substrate current body effect (m/v)     1e-5
*PVAG Gate dependence of Early voltage     0
*WR Width offset for parasitic resistance     1
*DWG Gate-bias dependence of channel width (m/v)     0
*DWB Body-bias dependence of channel width (m/v^0.5)     0
*B0 Bulk charge coefficient due to narrow width effect (m)     0
*B1 Bulk charge coefficient due to narrow width effect (m)     0
*ALPHA0 Substrate current impact ionization coefficient (m/v)     0
*ALPHA1 Substrate current impact ionization coefficient (1/V)     0
*AGIDL Pre-exponential coefficient for GIDL (1/ohm)     0
*BGIDL Exponential coefficient for GIDL (v)     2.3e9
*CGIDL Exponential coefficient for GIDL (V^3)     0.5
*PHIN Non-uniform vertical doping effect on surface potential     0
*EGIDL Fitting parameter for band bending for GIDL (V)     0.8
*AIGC Parameter for lgcs and lgcd      
*BIGC Parameter for lgcs and lgcd      
*CIGC Parameter for lgcs and lgcd (1/V)      
*AIGSD Parameter for lgs and lgd      
*BIGSD Parameter for lgs and lgd      
*CIGSD Parameter for lgs and lgd (1/V)      
*AIGBACC Parameter for lgb in accumulation     0.43
*BIGBACC Parameter for lgb in accumulation     0.054
*CIGBACC Parameter for lgb in accumulation (1/V)     0.075
*AIGBINV Parameter for lgb in inversion     0.35
*BIGBINV Parameter for lgb in inversion     0.03
*CIGBINV Parameter for lgb in inversion (1/V)     0.006
*NIGC Source/drain overlap length for lgs and lgd     1
*NIGBINV Parameter for lgb in inversion     3
*NIGBACC Parameter for lgb in accumulation     1
*NTOX Exponent for the gate oxide ratio     1
*EIGBINV Parameter for lgb in inversion (V)     1.1
*PIGCD Vds dependence of lgcs and lgcd     1
*POXEDGE Factor for the gate oxide thickness in source/drain overlap regions     1
*XRCRG1 Parameter for distributed channel-resistance effect for NQS models     12
*XRCRG2 Parameter to account for the excess channel diffusion resistance for NQS models     1
*LAMBDA Velocity overshoot coefficient (m/s)     0
*VTL Thermal velocity (m/s)      
*XN Velocity back scattering coefficient     3
*LC Velocity back scattering coefficient (m)     5e-9
*TNOIA Coefficient of channel-length dependence of total channel thermal noise     1.5
*TNOIB Coefficient of channel-length dependence of total channel thermal noise     3.5
*RNOIA Thermal noise coefficient A     0.577
*RNOIB Thermal noise coefficient B     0.5164
*NTNOI Noise factor for short-channel devices for TNOIMOD=0 only     1
*VFBSDOFF Flatband voltage offset parameter (V)     0
*LINTNOI Length reduction parameter offset (m)     0
*SAREF Reference distance between od edge to poly of one side (m)     1e-6
*SBREF Reference distance between od edge to poly of the other side (m)     1e-6
*WLOD Length parameter for stress effect (m)     0
*KU0 Mobility degradation/ enhancement coefficient for stress effect (m)     0
*KVSAT Saturation velocity degradation/ enhancement parameter for stress effect     0
*KVTH0 Threshold shift parameter for stress effect (v*m)     0
*TKU0 Temperature coefficient of ku0     0
*LLODKU0 Length parameter for u0 stress effect     0
*WLODKU0 Width parameter for u0 stress effect     0
*LLODVTH Length parameter for Vth stress effect     0
*WLODVTH Width parameter for Vth stress effect     0
*LKU0 Length dependence of ku0     0
*WKU0 Width dependence of ku0     0
*PKU0 Cross-term dependence of ku0     0
*LKVTH0 u0 length dependence of kvth0     0
*WKVTH0 u0 width dependence of kvth0     0
*PKVTH0 Cross-term dependence of kvth0     0
*STK2 k2 shift factor related to vth0 change (m)     0
*LODK2 k2 shift modification factor for stress effect     1
*STETA0 eta0 shift factor related to vth0 change (m)     0
*LODETA0 eta0 shift modification factor for stress effect     1
*BETA0 Substrate current impact ionization exponent (1/V)     30
*IJTHDFWD Limiting current in forward bias region (A) (Not implemented)      
*IJTHSFWD Limiting current in forward bias region (A) (Not implemented)     0.1
*IJTHDREV Limiting current in reverse bias region (A) (Not implemented)      
*IJTHSREV Limiting current in reverse bias region (A) (Not implemented)     0.1
*XJBVD Limiting current in forward bias region      
*XJBVS Limiting current in forward bias region     1
*BVD Breakdown voltage (V)      
*BVS Breakdown voltage (V)     10
*JTSS Bottom trap-assisted saturation current density (A/m)     0
*JTSD Bottom trap-assisted saturation current density (A/m)      
*JTSSWS STI sidewall trap-assisted saturation current density (A/m^2)     0
*JTSSWD STI sidewall trap-assisted saturation current density (A/m^2)      
*JTSSWGS Gate-edge sidewall trap-assisted saturation current density (A/m)     0
*JTSSWGD Gate-edge sidewall trap-assisted saturation current density (A/m)      
*NJTS Non-ideality factor for JTSS and JTSD     20
*NJTSSW Non-ideality factor for JTSSWS and JTSSWD     20
*NJTSSWG Non-ideality factor for JTSSWGS and JTSSWGD     20
*XTSS Power dependence of JTSS on temperature     0.02
*XTSD Power dependence of JTSD on temperature      
*XTSSWS Power dependence of JTSSWS on temperature     0.02
*XTSSWD Power dependence of JTSSWD on temperature      
*XTSSWGS Power dependence of JTSSWGS on temperature     0.02
*XTSSWGD Power dependence of JTSSWGD on temperature      
*TNJTS Temperature coefficient for NJTS     0
*TNJTSSW Temperature coefficient for NJTSSW     0
*TNJTSSWG Temperature coefficient for NJTSSWG     0
*VTSS Bottom trap-assisted voltage dependent parameter     10
*VTSD Bottom trap-assisted voltage dependent parameter      
*VTSSWS STI sidewall trap-assisted voltage dependent parameter     10
*VTSSWD STI sidewall trap-assisted voltage dependent parameter      
*VTSSWGS Gate-edge sidewall trap-assisted voltage dependent parameter     10
*VTSSWGD Gate-edge sidewall trap-assisted voltage dependent parameter      
*VFB Flat-band voltage      
*GBMIN Conductance in parallel with each of the five substrate resistances to avoid potential numerical instability     1e-12
*RBDB Resistance connected between db and b nodes     50
*RBPB Resistance connected between b and b nodes     50
*RBSB Resistance connected between sb and b nodes     50
*RBPS Resistance connected between b and s nodes     50
*RBPD Resistance connected between b and d nodes     50
*CGSL Overlap capacitance between gate and lightly-doped source region     0
*CGDL Overlap capacitance between gate and lightly-doped drain region (F/m)     0
*CKAPPAS Coefficient of bias-dependent overlap capacitance for the source side     0.6
*CKAPPAD Coefficient of bias-dependent overlap capacitance for the source side (V)      
*CF Coefficient of bias-dependent overlap capacitance for the source side (F/m)      
*CLC Constant term for the short channel model (m)     0.1e-6
*CLE Intrinsic capacitance fitting parameter     0.6
*DWC Delta W for capacitance model (m)      
*DLC Delta L for capacitance model (m)      
*XW Width variation due to masking etching (m)     0
*XL Length variation due to masking and etching (m)     0
*DLCIG Source/drain overlap length for lgs and lgd (m)      
*DWJ Offset of the S/D junction width      
*VFBCV Flat-band voltage for capmod=0     -1
*ACDE Exponential coefficient for charge thickness in CAPMOD=2 for accumulation and depletion regions (m/v)     1
*MOIN Exponential coefficient for charge thickness for accumulation and depletion regions (1/V)     15
*NOFF Transition parameter     1
*VOFFCV CV parameter in VgsteffCV for weak to strong inversion (V)     0
*DMCG Distance from S/D contact center to the gate edge (m)     0
*DMCI Distance from S/D contact center to the isolation edge in the channel-length direction (m)      
*DMDG Distance from S/D contact center to the gate edge (m)     0
*DMCGT DMCG of test structures (m)     0
*XGW Distance from the gate contact to the channel edge (m)     0
*XGL Offset of the gate length due to variations in patterning (m)     0
*RSHG Gate electrode diffusion sheet resistance     0.1
*NGCON Number of gate contacts     1
*TCJ Temperature coefficient for cj (1/C)     0
*TPB Temperature coefficient for pb (V/C)     0
*TCJSW Temperature coefficient for cjsw (1/C)     0
*TPBSW Temperature coefficient for pbsw (V/C)     0
*TCJSWG Temperature coefficient for cjswg (1/C)     0
*TPBSWG Temperature coefficient for pbswg (V/C)     0
*CDSC Length, width, product yes    
*CDSCB Length, width, product yes    
*CDSCD Length, width, product yes    
*CIT Length, width, product yes    
*NFACTOR Length, width, product yes    
*XJ Length, width, product yes    
*VSAT Length, width, product yes    
*A0 Length, width, product yes    
*AGS Length, width, product yes    
*A1 Length, width, product yes    
*A2 Length, width, product yes    
*AT Length, width, product yes    
*KETA Length, width, product yes    
*NSUB Length, width, product yes    
*NDEP Length, width, product yes    
*NSD Length, width, product yes    
*NGATE Length, width, product yes    
*GAMMA1 Length, width, product yes    
*GAMMA2 Length, width, product yes    
*VBX Length, width, product yes    
*VBM Length, width, product yes    
*XT Length, width, product yes    
*K1 Length, width, product yes    
*KT1 Length, width, product yes    
*KT1L Length, width, product yes    
*KT2 Length, width, product yes    
*K2 Length, width, product yes    
*K3 Length, width, product yes    
*K3B Length, width, product yes    
*LPE0 Length, width, product yes    
*LPEB Length, width, product yes    
*DVTP0 Length, width, product yes    
*DVTP1 Length, width, product yes    
*W0 Length, width, product yes    
*DVT0 Length, width, product yes    
*DVT1 Length, width, product yes    
*DVT2 Length, width, product yes    
*DVT0W Length, width, product yes    
*DVT1W Length, width, product yes    
*DVT2W Length, width, product yes    
*DROUT Length, width, product yes    
*DSUB Length, width, product yes    
*VTH0 Length, width, product yes    
*UA Length, width, product yes    
*UA1 Length, width, product yes    
*UB Length, width, product yes    
*UB1 Length, width, product yes    
*UC Length, width, product yes    
*UC1 Length, width, product yes    
*U0 Length, width, product yes    
*UTE Length, width, product yes    
*VOFF Length, width, product yes    
*MINV Length, width, product yes    
*FPROUT Length, width, product yes    
*PDITS Length, width, product yes    
*PDITSD Length, width, product yes    
*DELTA Length, width, product yes    
*RDSW Length, width, product yes    
*RDW Length, width, product yes    
*RSW Length, width, product yes    
*PRWB Length, width, product yes    
*PRWG Length, width, product yes    
*PRT Length, width, product yes    
*ETA0 Length, width, product yes    
*ETAB Length, width, product yes    
*PCLM Length, width, product yes    
*PDIBL1 Length, width, product yes    
*PDIBL2 Length, width, product yes    
*PIDBLB Length, width, product yes    
*PSCBE1 Length, width, product yes    
*PSCBE2 Length, width, product yes    
*PVAG Length, width, product yes    
*WR Length, width, product yes    
*DWG Length, width, product yes    
*DWB Length, width, product yes    
*B0 Length, width, product yes    
*B1 Length, width, product yes    
*ALPHA0 Length, width, product yes    
*ALPHA1 Length, width, product yes    
*BETA0 Length, width, product yes    
*AGIDL Length, width, product yes    
*BGIDL Length, width, product yes    
*CGIDL Length, width, product yes    
*PHIN Length, width, product yes    
*EGIDL Length, width, product yes    
*AIGC Length, width, product yes    
*BIGC Length, width, product yes    
*CIGC Length, width, product yes    
*AIGSD Length, width, product yes    
*BIGSD Length, width, product yes    
*CIGSD Length, width, product yes    
*AIGBACC Length, width, product yes    
*BIGBACC Length, width, product yes    
*CIGBACC Length, width, product yes    
*AIGBINV Length, width, product yes    
*BIGBINV Length, width, product yes    
*CIGBINV Length, width, product yes    
*NIGC Length, width, product yes    
*NIGBINV Length width, product yes    
*NIGBACC Length, width, product yes    
*NTOX Length, width, product yes    
*EIGBINV Length, width, product yes    
*PIGCD Length, width, product yes    
*POXEDGE Length, width, product yes    
*XRCRG1 Length, width, product yes    
*XRCRG2 Length, witch, product yes    
*LAMBDA Length, width, product yes    
*VTL Length, width, product yes    
*XN Length, width, product yes    
*VFBSDOFF Length, width, product yes    
*EU Length, width, product yes    
*VFB Length, width, product yes    
*CGSL Length, width, product yes    
*CGDL Length, width, product yes    
*CKAPPAS Length, width, product yes    
*CKAPPAD Length, width, product yes    
*CF Length, width, product yes    
*CLC Length, width, product yes    
*CLE Length, width, product yes    
*VFBCV Length, width, product yes    
*ACDE Length, width, product yes    
*MOIN Length, width, product yes    
*NOFF Length, width, product yes    
*VOFFCV Length, width, product yes    
*CGSO Non LDD region source-gate overlap capacitance per unit channel width (F/m)      
*CGDO Non LDD region drain-gate overlap capacitance per unit channel width      
*CGBO Non LDD region substrate-gate overlap capacitance per unit channel width (F/m)      
*XPART Charge partition number. Use 0.0 for 40/60, 0.5 for 50/50, or 1.0 for 0/100     0
*RSH Source/drain diffusion sheet resistance     0
*JSS Bottom junction reverse saturation current density (A/m^2)     1e-4
*JSWS Isolation-edge sidewall reverse saturation current density (A/m)     0
*JSWGS Gate-edge sidewall reverse saturation current density (A/m)     0
*PBS Bottom junction built-in potential (V)     1
*MJS Bulk junction bottom grading coefficient     0.5
*PBSWS Isolation-edge sidewall junction built-in potential (V)     1
*MJSWS Isolation-edge sidewall junction capacitance grading coefficient     0.33
*CJS Zero bias bottom junction capacitance per unit area (F/m^2)     5e-4
*CJSWS Zero-bias junction sidewall capacitance density (F/m)     5e-10
*NJS Bulk-Source junction emission coefficient     1
*PBSWGS Gate-edge sidewall junction built-in potential (V)      
*MJSWGS Gate-edge sidewall junction grading coefficient      
*CJSWGS Zero-bias gate-side junction capacitance density (F/m)      
*XTIS Bulk-Source junction saturation current temperature exponent     3
*JSD Bottom junction reverse saturation current density (A/m^2)      
*JSWD Isolation-edge sidewall reverse saturation current density (A/m)      
*JSWGD Gate-edge sidewall reverse saturation current density (A/m)      
*PBD Bottom junction built-in potential (V)      
*MJD Bulk junction bottom grading coefficient      
*PBSWD Isolation-edge sidewall junction built-in potential (V)      
*MJSWD Isolation-edge sidewall junction capacitance grading coefficient      
*CJD Zero bias bottom junction capacitance per unit area (F/m^2)      
*CJSWD Zero-bias junction sidewall capacitance density (F/m)      
*NJD Bulk-Source junction emission coefficient      
*PBSWGD Gate-edge sidewall junction built-in potential (V)      
*MJSWGD Gate-edge sidewall junction grading coefficient      
*CJSWGD Zero-bias gate-side junction capacitance density (F/m)      
*XTID Bulk-Source junction saturation current temperature exponent      
*LINT Lateral diffusion for one side (m)     0
*LL Length dependence of delta L     0
*LLC Length dependence of delta L for CV      
*LLN Length exponent of delta L     1
*LW Width dependence of delta L     0
*LWC Width dependence pf delta L for CV      
*LWN Width exponent for delta L     1
*LWL Area dependence of delta L     0
*LWLC Area dependence of delta L for CV      
*LMIN Minimum channel length for which the model is valid (m)     0
*LMAX Maximum channel length for which the model is valid (m)     1
*WINT Width reduction for one side (m)     0
*WL Length dependence of delta W     0
*WLC Length dependence of delta W for CV      
*WLN Length exponent of delta W     1
*WW Width dependence of delta W     0
*WWC Width dependence of delta W for CV      
*WWN Width exponent of delta W     1
*WWL Area dependence of delta W     0
*WWLC Area dependence of delta W for CV      
*WMIN Minimum channel width for which the model is valid (m)     0
*WMAX Maximum channel width for which the model is valid (m)     1
*NOIA Flicker noise parameter A      
*NOIB Flicker noise parameter B      
*NOIC Flicker noise parameter C     8.75e9
*EM Saturation field (V/m)     4.1e7
*EF Flicker noise frequency exponent     1
*AF Flicker noise exponent     1
*KF Flicker noise coefficient     0
*COMPAT Model compatibility selector     1
VERSION Model version     4.4
*SCA Integral of the first distribution function for scattered well dopant     0.0
*SCB Integral of the second distribution function for scattered well dopant     0.0
*SCC Integral of the third distribution function for scattered well dopant     0.0
*SC Distance to a single well edge     0.0
*DELVTO Zero bias threshold voltage variation     0.0
*UD Coulomb scattering factor of mobility yes   1e14
*UD1 Temperature coefficient of ud yes   0.0
*UP Channel length linear factor of mobility yes   0.0
*LP Channel length exponential factor of mobility yes   1e-8
*TVFBSDOFF Temperature parameter for vfbsdoff yes   0.0
*TVOFF Temperature parameter for voff yes   0.0
*RBPS0 Body resistance RBPS scaling     50
*RBPSL Body resistance RBPS L scaling     0.0
*RBPSW Body resistance RBPS W scaling     0.0
*RBPSNF Body resistance RBPS NF scaling     0.0
*RBPD0 Body resistance RBPD scaling     50
*RBPDL Body resistance RBPD L scaling     0.0
*RBPDW Body resistance RBPD W scaling     0.0
*RBPDNF Body resistance RBPD NF scaling     0.0
*RBPBX0 Body resistance RBPBX scaling     100
*RBPBXL Body resistance RBPBX L scaling     0.0
*RBPBXW Body resistance RBPBX W scaling     0.0
*RBPBXNF Body resistance RBPBX NF scaling     0.0
*RBPBY0 Body resistance RBPBY scaling     100
*RBPBYL Body resistance RBPBY L scaling     0.0
*RBPBYW Body resistance RBPBY W scaling     0.0
*RBPBYNF Body resistance RBPBY NF scaling     0.0
*RBSBX0 Body resistance RBSBX scaling     100
*RBSBY0 Body resistance RBSBY scaling     100
*RBDBX0 Body resistance RBDBX scaling     100
*RBDBY0 Body resistance RBDBY scaling     100
*RBSDBXL Body resistance RBSDBX L scaling     0.0
*RBSDBXW Body resistance RBSDBX W scaling     0.0
*RBSDBXNF Body resistance RBSDBX NF scaling     0.0
*RBSDBYL Body resistance RBSDBY L scaling     0.0
*RBSDBYW Body resistance RBSDBY W scaling     0.0
*RBSDBYNF Body resistance RBSDBY NF scaling     0.0
*WEB Coefficient for SCB     0.0
*WEC Coefficient for SCC     0.0
*KVTH0WE Threshold shift factor for well proximity effect yes   0.0
*K2WE K2 shift factor for well proximity effect yes   0.0
*KU0WE Mobility degradation factor for well proximity effect yes   0.0
*SCREF Reference distance to calculate SCA, SCB and SCC     1e-6
*WPEMOD Flag for WPE model (WPEMOD=1 to activate this model     0.0

Operating Points

The following letter pairs are used to identify the NL branches: ds, bs, bd, gs and gd. Here, g, d, s and b correspond to the gate, drain, source and substrate terminals, respectively. These are used to identify branch related operating point information such as branch voltages and currents.

Parameter Description
vth (Voltage) Threshold voltage
vdsat (Voltage) Drain-source saturation voltage
gm (Conductance) Common-source transconductance
gds (Conductance) Common-source output conductance
gmbs (Conductance) Body-transconductance
cgg (Capacitance) , intrinsic charge.
cgb (Capacitance) , intrinsic charge.
cgd (Capacitance) , intrinsic charge.
cgs (Capacitance) , intrinsic charge.
cbg (Capacitance) , intrinsic charge.
cbb (Capacitance) , intrinsic charge.
cbd (Capacitance) , intrinsic charge.
cbs (Capacitance) , intrinsic charge.
cdg (Capacitance) , intrinsic charge.
cdb (Capacitance) , intrinsic charge.
cdd (Capacitance) , intrinsic charge.
cds (Capacitance) , intrinsic charge.
csg (Capacitance) , intrinsic charge.
csb (Capacitance) , intrinsic charge.
csd (Capacitance) , intrinsic charge.
css (Capacitance) , intrinsic charge.
cjd (Capacitance) Drain-substrate junction capacitance
cjs (Capacitance) Source-substrate junction capacitance
pwr (Power) Dissipated power

Implementation Details

The TYPE parameter controls whether the device is N or P channel, which is reflected by the device symbol. The NFLAG and COMPAT parameters are unique to the AWR implementation. The NFLAG parameter allows you to turn the device noise On or Off. COMPAT, the compatibility selection flag, takes three different values: HSPICE, AWR, and SPECTRE. The HSPICE and Spectre values emulate HSPICE and Spectre implementations of the BSIM4 model, respectively. Parameters without default values listed in the previous table get their values from formulas. In many instances, the provided default value depends on the compatibility flag setting. The VERSION parameter allows selecting between versions 4.4 and 4.5 of BSIM4.

Layout

This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.

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