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(Obsolete) Advanced Compatible Angelov HEMT Model: ANGELOV2C

This version of the Angelov/Zirath/Rorsman (Chalmers) model is designed to be compatible with other implementations. This model is similar to the ANGELOV2 model.

Symbol

Summary

This element is OBSOLETE and is replaced by the Advanced Compatible Angelov HEMT Model (ANGELOV2C2) element.

Equivalent Circuit

Parameters

Parameter Description Units Default Value
ID Device ID Text AC1
Idsmod Ids model selector Integer 0
Igmod Igs/Igd model selector Integer 0
Capmod Capacitance model selector Integer 2
*Ipk0 Current at maximum transconductance Current 0.050
*Vpks Gate voltage at maximum transconductance Voltage -0.2
*Dvpks Delta gate voltage at peak transconductance Voltage 0.2
*P1 Coefficient for channel current   1.0
*P2 Coefficient for channel current   0
*P3 Coefficient for channel current   0
*Alphar Saturation parameter   0.1
*Alphas Saturation parameter   1.0
*Vkn Knee voltage parameter Voltage 0.8
*Lambda Channel length modulation term   0
*Lambda1 Channel length modulation term   0
*Lvg Coefficient for Lambda   0
*B1 Coefficient for P1 dependence on Vds   0
*B2 Coefficient for P1 dependence on Vds   3.0
*Lsb0 Soft breakdown parameter   0
*Vtr Threshold voltage term for breakdown Voltage 20
*Vsb2 Surface breakdown parameter Voltage 0
*Cds Drain-to-source capacitance (linear) Capacitance 0
*Cgspi Gate-to-source capacitance term Capacitance 0
*Cgs0 Gate-to-source capacitance coefficient Capacitance 0
*Cgdpi Gate-to-drain capacitance term Capacitance 0
*Cgd0 Gate-to-drain capacitance coefficient Capacitance 0
*Cgdpe External gate-to-drain capacitance Capacitance 0
*P10 Capacitance polynomial coefficient   0
*P11 Capacitance polynomial coefficient   1.0
*P20 Capacitance polynomial coefficient   0
*P21 Capacitance polynomial coefficient   0.2
*P30 Capacitance polynomial coefficient   0
*P31 Capacitance polynomial coefficient   0.2
*P40 Capacitance polynomial coefficient   0
*P41 Capacitance polynomial coefficient   1.0
*P111 Capacitance polynomial coefficient   0
*Ij Gate forward conductance saturation current Current 5e-4
*Pg Gate dc current parameter   0.0
*Ne Gate current ideality factor   1.4
*Vjg Gate dc current parameter Voltage 0.7
*Rg Gate series resistance Resistance 0
*Rd Drain series resistance Resistance 0
*Ri Gate-to-source intrinsic series resistance Resistance 0
*Rs Source series resistance Resistance 0
*Rgd Gate-to-drain series resistance Resistance 0
*Lg Gate series inductance (not scaled with AFAC) Inductance 0
*Ld Drain series inductance (not scaled with AFAC) Inductance 0
*Ls Source series inductance (not scaled with AFAC) Inductance 0
*Tau Time delay Time 0
*Rcmin Minimum value of Rc Resistance 1.0e-3
*Rcin Resistance of frequency-dependent output conductance Resistance 0.0
*Crfin Capacitance of frequency-dependent output conductance Capacitance 0.0
*Rth Thermal resistance Resistance 0.0
*Cth Thermal capacitance Capacitance 0.0 1
*Tcipk0 Temperature coefficient for Ipk0 parameter   0.0
*Tcp1 Temperature coefficient for P1 parameter   0.0
*Tccgs0 Temperature coefficient for Cgs0 parameter   0.0
*Tccgd0 Temperature coefficient for Cgd0 parameter   0.0
*Tclsb0 Temperature coefficient for Lsb0 parameter   0.0
*Tcrc Temperature coefficient for Crc parameter   0.0
*Tccrf Temperature coefficient for Crf parameter   0.0
*Tnom Parameter measurement temperature Temperature 25 C
Selft Self-heating flag Boolean False
Noimod Noise model selector Integer 0
*NoiseR Gate noise coefficient   0.5
*NoiseP Drain noise coefficient   1.0
*NoiseC Gate-drain noise correlation coefficient   0.9
*Fnc Flicker noise corner Frequency 0.0
*Kf Flicker noise constant   0.0
*Af Flicker noise exponent   1.0
*Ffe Flicker noise frequency exponent Frequency 1.0
*Tg Gate noise temperature Temperature 25 C
*Td Drain noise temperature coefficient Temperature 25 C
*Tdl Drain noise temperature coefficient   0.1
*Tmn Noise fitting term   1.0
*Klf Flicker noise coefficient   0.0
*Fgr Generation-recombination noise corner frequency Frequency 0.0
*Np Flicker noise frequency exponent   1.0
*Lw Effective gate noise width Length 0.1 mm
*DTMAX Maximum temperature increase (C) in self-heating Temperature 300
*TMIN Minimum device temperature Temperature 10
AFAC Gate-width scale factor   1.0
NFING Number of gate fingers scale factor   1.0

This default value is preserved for compatibility, but it is a poor choice. If Rth is nonzero, Cth should be given a large value to prevent convergence problems.

* indicates a secondary parameter

Implementation Details

ANGELOV2C is a version of the ANGELOV2 model that is compatible with other implementations. This model is not identical to the original ANGELOV2 model and should be used only where compatibility is needed.

A few characteristics of the model are unique to Cadence AWR®. The model scales according to gate width and number of gate fingers in the usual manner (see other FET models for examples). The default values of AFAC and NFING provide compatibility with other implementations. The temperature of the device is limited by DTMAX and TMIN during harmonic-balance iterations to prevent ill-conditioning when self-heating is used. You should set these in such a way that it is impossible, for example, for temperature coefficients to make a parameter (say, a resistance) change sign at these extreme temperatures.

Layout

This element does not have an assigned layout cell. You can assign artwork cells to any element. See “Assigning Artwork Cells to Layout of Schematic Elements” for details.

References

There are no references for this model. This model was implemented before publishing. The above information comes from personal communication from Prof. Angelov.

For further information about the model, contact Cadence AWR Technical Support.

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